Light emission from nanometer-sized silicon particles fabricated by the laser ablation method
Luminescent nanometer-sized silicon particles are fabricated by laser ablation of a silicon target in helium gas. The formation of products is found to be governed by the dynamics of the laser-ablated silicon particles in the gas. The products deposited on silicon substrates exhibit light emission w...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996-09, Vol.35 (9A), p.4780-4784 |
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| container_end_page | 4784 |
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| container_issue | 9A |
| container_start_page | 4780 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | MAKIMURA, T KUNII, Y MURAKAMI, K |
| description | Luminescent nanometer-sized silicon particles are fabricated by laser ablation of a silicon target in helium gas. The formation of products is found to be governed by the dynamics of the laser-ablated silicon particles in the gas. The products deposited on silicon substrates exhibit light emission with a peak at 1.6 eV in the air, while 2.1 eV after annealing for 20 min at 800°C in oxygen gas. Applying the laser ablation technique, we demonstrate a novel technique for fabricating silicon particles embedded in a silicon dioxide film. The particles also exhibit visible light emission. |
| doi_str_mv | 10.1143/jjap.35.4780 |
| format | Article |
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The formation of products is found to be governed by the dynamics of the laser-ablated silicon particles in the gas. The products deposited on silicon substrates exhibit light emission with a peak at 1.6 eV in the air, while 2.1 eV after annealing for 20 min at 800°C in oxygen gas. Applying the laser ablation technique, we demonstrate a novel technique for fabricating silicon particles embedded in a silicon dioxide film. The particles also exhibit visible light emission.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.35.4780</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Amorphous semiconductors; glasses ; Amorphous semiconductors; glasses; nanocrystalline materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Elemental semiconductors ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Photoluminescence ; Physics</subject><ispartof>Japanese Journal of Applied Physics, 1996-09, Vol.35 (9A), p.4780-4784</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c410t-2ec74f3da506bb2e69b9e80c4576e7cf69a5e64999501510afe24d5cb801a3d13</citedby><cites>FETCH-LOGICAL-c410t-2ec74f3da506bb2e69b9e80c4576e7cf69a5e64999501510afe24d5cb801a3d13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3223714$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MAKIMURA, T</creatorcontrib><creatorcontrib>KUNII, Y</creatorcontrib><creatorcontrib>MURAKAMI, K</creatorcontrib><title>Light emission from nanometer-sized silicon particles fabricated by the laser ablation method</title><title>Japanese Journal of Applied Physics</title><description>Luminescent nanometer-sized silicon particles are fabricated by laser ablation of a silicon target in helium gas. The formation of products is found to be governed by the dynamics of the laser-ablated silicon particles in the gas. The products deposited on silicon substrates exhibit light emission with a peak at 1.6 eV in the air, while 2.1 eV after annealing for 20 min at 800°C in oxygen gas. Applying the laser ablation technique, we demonstrate a novel technique for fabricating silicon particles embedded in a silicon dioxide film. The particles also exhibit visible light emission.</description><subject>Amorphous semiconductors; glasses</subject><subject>Amorphous semiconductors; glasses; nanocrystalline materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Elemental semiconductors</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kLtOAzEURC0EEiHQ8QEuKNng92bLKOIVRYICSrS69l4TR_uS7SZ8PRsFUY1GM2eKIeSWswXnSj7s9zAupF6ocsnOyIxLVRaKGX1OZowJXqhKiEtyldJ-skYrPiNf2_C9yxS7kFIYeurj0NEe-qHDjLFI4QcbmkIb3BSOEHNwLSbqwcbgIE-hPdC8Q9pCwkjBtpCPOxO-G5prcuGhTXjzp3Py-fT4sX4ptm_Pr-vVtnCKs1wIdKXysgHNjLUCTWUrXDKndGmwdN5UoNGoqqo045oz8ChUo51dMg6y4XJO7k-7Lg4pRfT1GEMH8VBzVh-vqTeb1XstdX28ZqrfneojJAetj9C7kP4ZKYQsJ-gXZO1lQw</recordid><startdate>19960901</startdate><enddate>19960901</enddate><creator>MAKIMURA, T</creator><creator>KUNII, Y</creator><creator>MURAKAMI, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960901</creationdate><title>Light emission from nanometer-sized silicon particles fabricated by the laser ablation method</title><author>MAKIMURA, T ; KUNII, Y ; MURAKAMI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c410t-2ec74f3da506bb2e69b9e80c4576e7cf69a5e64999501510afe24d5cb801a3d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Amorphous semiconductors; glasses</topic><topic>Amorphous semiconductors; glasses; nanocrystalline materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Elemental semiconductors</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MAKIMURA, T</creatorcontrib><creatorcontrib>KUNII, Y</creatorcontrib><creatorcontrib>MURAKAMI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MAKIMURA, T</au><au>KUNII, Y</au><au>MURAKAMI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Light emission from nanometer-sized silicon particles fabricated by the laser ablation method</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996-09-01</date><risdate>1996</risdate><volume>35</volume><issue>9A</issue><spage>4780</spage><epage>4784</epage><pages>4780-4784</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Luminescent nanometer-sized silicon particles are fabricated by laser ablation of a silicon target in helium gas. The formation of products is found to be governed by the dynamics of the laser-ablated silicon particles in the gas. The products deposited on silicon substrates exhibit light emission with a peak at 1.6 eV in the air, while 2.1 eV after annealing for 20 min at 800°C in oxygen gas. Applying the laser ablation technique, we demonstrate a novel technique for fabricating silicon particles embedded in a silicon dioxide film. The particles also exhibit visible light emission.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.35.4780</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996-09, Vol.35 (9A), p.4780-4784 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_35_4780 |
| source | Institute of Physics Journals |
| subjects | Amorphous semiconductors glasses Amorphous semiconductors glasses nanocrystalline materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Elemental semiconductors Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics |
| title | Light emission from nanometer-sized silicon particles fabricated by the laser ablation method |
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