Nanometer-sized phase-change recording using a scanning near-field optical microscope with a laser diode
We present for the first time a nanometer-sized phase-change recording using a scanning near-field optical microscope (PC-SNOM recording). The recording experiments were performed with a SNOM using a 785-nm-wavelength semiconductor laser diode, shear force detection for gap control and reflected lig...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996, Vol.35 (1B), p.443-447 |
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| container_end_page | 447 |
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| container_issue | 1B |
| container_start_page | 443 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | HOSAKA, S SHINTANI, T MIYAMOTO, M HIROTSUNE, A TERAO, M YOSHIDA, M FUJITA, K KÄMMER, S |
| description | We present for the first time a nanometer-sized phase-change recording using a scanning near-field optical microscope (PC-SNOM recording). The recording experiments were performed with a SNOM using a 785-nm-wavelength semiconductor laser diode, shear force detection for gap control and reflected light detection for observing the domains (reading). The recording media of ZnS·SiO
2
(20 nm)/GeSbTe(30 nm)/ZnS·SiO
2
(150 nm)/polycarbonate substrate were used. The writings were done at laser powers of 8.4–7.3 mW in the probe for pulse widths of 5 or 0.5 ms. As a result, we obtained a minimum recorded domain size of 60 nm in diameter. This size shows a potential to achieve an ultrahigh density PC-SNOM recording with about 170 Gb/in
2
. A possibility of achieving high speed readout for the future data storage is also discussed. |
| doi_str_mv | 10.1143/JJAP.35.443 |
| format | Article |
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2
(20 nm)/GeSbTe(30 nm)/ZnS·SiO
2
(150 nm)/polycarbonate substrate were used. The writings were done at laser powers of 8.4–7.3 mW in the probe for pulse widths of 5 or 0.5 ms. As a result, we obtained a minimum recorded domain size of 60 nm in diameter. This size shows a potential to achieve an ultrahigh density PC-SNOM recording with about 170 Gb/in
2
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2
(20 nm)/GeSbTe(30 nm)/ZnS·SiO
2
(150 nm)/polycarbonate substrate were used. The writings were done at laser powers of 8.4–7.3 mW in the probe for pulse widths of 5 or 0.5 ms. As a result, we obtained a minimum recorded domain size of 60 nm in diameter. This size shows a potential to achieve an ultrahigh density PC-SNOM recording with about 170 Gb/in
2
. A possibility of achieving high speed readout for the future data storage is also discussed.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Miscellaneous</subject><subject>Storage and reproduction of information</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kE1PwzAMhiMEEmNw4g_kwA1lJHHSrsdpgsE0AYfdKzdJ16AurZIiBL-eVkNc_CE9fm2_hNwKvhBCwcN2u3pfgF4oBWdkJkDlTPFMn5MZ51IwVUh5Sa5S-hjbTCsxI80rhu7oBhdZ8j_O0r7B5JhpMBwcjc500fpwoJ9pikiTwRCmMjiMrPautbTrB2-wpUdvYpdM1zv65YdmpNtRK1LrO-uuyUWNbXI3f3lO9k-P-_Uz271tXtarHTMy4wOTRptCcQWqQmksLJUyVe4EFJIrIXGpOcc814hFzo0VVVYjVJlcFsrlADAn9yfZ6ZQUXV320R8xfpeCl5NH5eRRCbocPRrpuxPd4_hYW0cMxqf_EZhW5hx-AfsqZuM</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>HOSAKA, S</creator><creator>SHINTANI, T</creator><creator>MIYAMOTO, M</creator><creator>HIROTSUNE, A</creator><creator>TERAO, M</creator><creator>YOSHIDA, M</creator><creator>FUJITA, K</creator><creator>KÄMMER, S</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1996</creationdate><title>Nanometer-sized phase-change recording using a scanning near-field optical microscope with a laser diode</title><author>HOSAKA, S ; SHINTANI, T ; MIYAMOTO, M ; HIROTSUNE, A ; TERAO, M ; YOSHIDA, M ; FUJITA, K ; KÄMMER, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-2c5c940434ba2cd3844cb7e13920412a8500a775aa970cd1b6fa3b62894e7333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Miscellaneous</topic><topic>Storage and reproduction of information</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HOSAKA, S</creatorcontrib><creatorcontrib>SHINTANI, T</creatorcontrib><creatorcontrib>MIYAMOTO, M</creatorcontrib><creatorcontrib>HIROTSUNE, A</creatorcontrib><creatorcontrib>TERAO, M</creatorcontrib><creatorcontrib>YOSHIDA, M</creatorcontrib><creatorcontrib>FUJITA, K</creatorcontrib><creatorcontrib>KÄMMER, S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HOSAKA, S</au><au>SHINTANI, T</au><au>MIYAMOTO, M</au><au>HIROTSUNE, A</au><au>TERAO, M</au><au>YOSHIDA, M</au><au>FUJITA, K</au><au>KÄMMER, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nanometer-sized phase-change recording using a scanning near-field optical microscope with a laser diode</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996</date><risdate>1996</risdate><volume>35</volume><issue>1B</issue><spage>443</spage><epage>447</epage><pages>443-447</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>We present for the first time a nanometer-sized phase-change recording using a scanning near-field optical microscope (PC-SNOM recording). The recording experiments were performed with a SNOM using a 785-nm-wavelength semiconductor laser diode, shear force detection for gap control and reflected light detection for observing the domains (reading). The recording media of ZnS·SiO
2
(20 nm)/GeSbTe(30 nm)/ZnS·SiO
2
(150 nm)/polycarbonate substrate were used. The writings were done at laser powers of 8.4–7.3 mW in the probe for pulse widths of 5 or 0.5 ms. As a result, we obtained a minimum recorded domain size of 60 nm in diameter. This size shows a potential to achieve an ultrahigh density PC-SNOM recording with about 170 Gb/in
2
. A possibility of achieving high speed readout for the future data storage is also discussed.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.35.443</doi><tpages>5</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1996, Vol.35 (1B), p.443-447 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_35_443 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Miscellaneous Storage and reproduction of information |
| title | Nanometer-sized phase-change recording using a scanning near-field optical microscope with a laser diode |
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