SiO 2 Etching in C 4 F 8 /O 2 Electron Cyclotron Resonance Plasma

SiO 2 Etching in C 4 F 8 /O 2 Electron Cyclotron Resonance Plasma

We report the application of C 4 F 8 /O 2 electron cyclotron resonance (ECR) plasma to SiO 2 etching. The effect on SiO 2 etching characteristics of O 2 addition to C 4 F 8 ECR plasma is investigated. In C 4 F 8 ECR plasma (no O 2 addition), strong reactive ion etching (RIE) lag effect of SiO 2 and...

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Veröffentlicht in:Japanese Journal of Applied Physics 1996-04, Vol.35 (4S), p.2483
Hauptverfasser: Siozawa, Ken-itiro, Tabaru, Kenji, Maruyama, Takahiro, Nobuo Fujiwara, Nobuo Fujiwara, Masahiro Yoneda, Masahiro Yoneda
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container_issue 4S
container_start_page 2483
container_title Japanese Journal of Applied Physics
container_volume 35
creator Siozawa, Ken-itiro
Tabaru, Kenji
Maruyama, Takahiro
Nobuo Fujiwara, Nobuo Fujiwara
Masahiro Yoneda, Masahiro Yoneda
description We report the application of C 4 F 8 /O 2 electron cyclotron resonance (ECR) plasma to SiO 2 etching. The effect on SiO 2 etching characteristics of O 2 addition to C 4 F 8 ECR plasma is investigated. In C 4 F 8 ECR plasma (no O 2 addition), strong reactive ion etching (RIE) lag effect of SiO 2 and poly-Si etching is observed. However, with O 2 addition, the RIE lag effect of SiO 2 etching decreases markedly whereas the RIE lag effect of poly-Si etching decreases gradually. Consequently, SiO 2 etching selectivity to poly-Si increases. The results of mass spectrometric measurement using two orifices indicate that surface reaction probability of fluorocarbon molecules is affected by O 2 addition.
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The effect on SiO 2 etching characteristics of O 2 addition to C 4 F 8 ECR plasma is investigated. In C 4 F 8 ECR plasma (no O 2 addition), strong reactive ion etching (RIE) lag effect of SiO 2 and poly-Si etching is observed. However, with O 2 addition, the RIE lag effect of SiO 2 etching decreases markedly whereas the RIE lag effect of poly-Si etching decreases gradually. Consequently, SiO 2 etching selectivity to poly-Si increases. The results of mass spectrometric measurement using two orifices indicate that surface reaction probability of fluorocarbon molecules is affected by O 2 addition.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.2483</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1996-04, Vol.35 (4S), p.2483</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c803-e511b0fca231ec722fdde61c0476c18b3512a02ae629b7af5656380d7a481c283</citedby><cites>FETCH-LOGICAL-c803-e511b0fca231ec722fdde61c0476c18b3512a02ae629b7af5656380d7a481c283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Siozawa, Ken-itiro</creatorcontrib><creatorcontrib>Tabaru, Kenji</creatorcontrib><creatorcontrib>Maruyama, Takahiro</creatorcontrib><creatorcontrib>Nobuo Fujiwara, Nobuo Fujiwara</creatorcontrib><creatorcontrib>Masahiro Yoneda, Masahiro Yoneda</creatorcontrib><title>SiO 2 Etching in C 4 F 8 /O 2 Electron Cyclotron Resonance Plasma</title><title>Japanese Journal of Applied Physics</title><description>We report the application of C 4 F 8 /O 2 electron cyclotron resonance (ECR) plasma to SiO 2 etching. 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title SiO 2 Etching in C 4 F 8 /O 2 Electron Cyclotron Resonance Plasma
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