Experimental evaluation of phase contrast lithography
Phase contrast lithography (PCL) using an annular-phase-only filter on a pupil plane of a projection optics was evaluated experimentally for lines and spaces and hole patterns. A g -line exposure tool was fabricated so that a spatial frequency filter can be inserted in the pupil of the projection op...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996, Vol.35 (4A), p.2372-2376 |
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| container_end_page | 2376 |
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| container_issue | 4A |
| container_start_page | 2372 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | FUJISAWA, T TANAKA, S INOUE, S |
| description | Phase contrast lithography (PCL) using an annular-phase-only filter on a pupil plane of a projection optics was evaluated experimentally for lines and spaces and hole patterns. A
g
-line exposure tool was fabricated so that a spatial frequency filter can be inserted in the pupil of the projection optics for a feasibility study. Using a common annular-phase-only filter, depth of focus (DOF) was 40% and 14% better than that without the filter for 0.6 µ m lines and spaces and 0.6 µ m hole patterns, respectively. In addition, it was confirmed that combination of PCL with low contrast imaging process is more effective in DOF enhancement. |
| doi_str_mv | 10.1143/JJAP.35.2372 |
| format | Article |
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g
-line exposure tool was fabricated so that a spatial frequency filter can be inserted in the pupil of the projection optics for a feasibility study. Using a common annular-phase-only filter, depth of focus (DOF) was 40% and 14% better than that without the filter for 0.6 µ m lines and spaces and 0.6 µ m hole patterns, respectively. In addition, it was confirmed that combination of PCL with low contrast imaging process is more effective in DOF enhancement.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.2372</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2372-2376</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c342t-e2373bae466c67fa58fdf4e45826253261062c2dae3d2a7a04b24d1e4c5e72db3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3102593$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>FUJISAWA, T</creatorcontrib><creatorcontrib>TANAKA, S</creatorcontrib><creatorcontrib>INOUE, S</creatorcontrib><title>Experimental evaluation of phase contrast lithography</title><title>Japanese Journal of Applied Physics</title><description>Phase contrast lithography (PCL) using an annular-phase-only filter on a pupil plane of a projection optics was evaluated experimentally for lines and spaces and hole patterns. A
g
-line exposure tool was fabricated so that a spatial frequency filter can be inserted in the pupil of the projection optics for a feasibility study. Using a common annular-phase-only filter, depth of focus (DOF) was 40% and 14% better than that without the filter for 0.6 µ m lines and spaces and 0.6 µ m hole patterns, respectively. In addition, it was confirmed that combination of PCL with low contrast imaging process is more effective in DOF enhancement.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9j09LxDAUxIMoWFdvfoAePNqavJeku8dlWf8sC3rQc3lNE1upbUmiuN_elhVPw8DMMD_GrgXPhZB4t9utX3JUOWABJywRKItMcq1OWcI5iEyuAM7ZRQgfk9VKioSp7c9offtp-0hdar-p-6LYDn06uHRsKNjUDH30FGLatbEZ3j2NzeGSnTnqgr360wV7u9--bh6z_fPD02a9zwxKiJmdjmBFVmptdOFILV3tpJVqCRoUghZcg4GaLNZABXFZgayFlUbZAuoKF-z2uGv8EIK3rhynr-QPpeDljFzOyCWqckae4jfH-EjBUOc89aYN_x0UHNQK8Re-gFYx</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>FUJISAWA, T</creator><creator>TANAKA, S</creator><creator>INOUE, S</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1996</creationdate><title>Experimental evaluation of phase contrast lithography</title><author>FUJISAWA, T ; TANAKA, S ; INOUE, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c342t-e2373bae466c67fa58fdf4e45826253261062c2dae3d2a7a04b24d1e4c5e72db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FUJISAWA, T</creatorcontrib><creatorcontrib>TANAKA, S</creatorcontrib><creatorcontrib>INOUE, S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FUJISAWA, T</au><au>TANAKA, S</au><au>INOUE, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental evaluation of phase contrast lithography</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996</date><risdate>1996</risdate><volume>35</volume><issue>4A</issue><spage>2372</spage><epage>2376</epage><pages>2372-2376</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Phase contrast lithography (PCL) using an annular-phase-only filter on a pupil plane of a projection optics was evaluated experimentally for lines and spaces and hole patterns. A
g
-line exposure tool was fabricated so that a spatial frequency filter can be inserted in the pupil of the projection optics for a feasibility study. Using a common annular-phase-only filter, depth of focus (DOF) was 40% and 14% better than that without the filter for 0.6 µ m lines and spaces and 0.6 µ m hole patterns, respectively. In addition, it was confirmed that combination of PCL with low contrast imaging process is more effective in DOF enhancement.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.35.2372</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2372-2376 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Experimental evaluation of phase contrast lithography |
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