Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier
Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n + -GaAs with the Si-doping concentration of about 2×10 18 cm -3 . The minimum specific contact resistivi...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996, Vol.35 (4A), p.2110-2111 |
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| container_end_page | 2111 |
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| container_issue | 4A |
| container_start_page | 2110 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | CHAI, C.-Y HUANG, J.-A LAI, Y.-L WU, J.-W CHANG, C.-Y CHAN, Y.-J CHENG, H.-C |
| description | Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n
+
-GaAs with the Si-doping concentration of about 2×10
18
cm
-3
. The minimum specific contact resistivity as low as 1.2×10
-7
Ω·cm
2
can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier. |
| doi_str_mv | 10.1143/JJAP.35.2110 |
| format | Article |
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+
-GaAs with the Si-doping concentration of about 2×10
18
cm
-3
. The minimum specific contact resistivity as low as 1.2×10
-7
Ω·cm
2
can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.2110</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2110-2111</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-ac62aa018458126259f0b5ffaf3fda1f294e25b59341e88d08d19c49b37e4c763</citedby><cites>FETCH-LOGICAL-c385t-ac62aa018458126259f0b5ffaf3fda1f294e25b59341e88d08d19c49b37e4c763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3102615$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHAI, C.-Y</creatorcontrib><creatorcontrib>HUANG, J.-A</creatorcontrib><creatorcontrib>LAI, Y.-L</creatorcontrib><creatorcontrib>WU, J.-W</creatorcontrib><creatorcontrib>CHANG, C.-Y</creatorcontrib><creatorcontrib>CHAN, Y.-J</creatorcontrib><creatorcontrib>CHENG, H.-C</creatorcontrib><title>Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier</title><title>Japanese Journal of Applied Physics</title><description>Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n
+
-GaAs with the Si-doping concentration of about 2×10
18
cm
-3
. The minimum specific contact resistivity as low as 1.2×10
-7
Ω·cm
2
can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kMtOwzAQRS0EEqWw4wO8YEkSjx95LKOqFKoiumjX0cSxqVGaVHYq0b9vqiJWV3PnzCwOIc_AYgApkuWyXMdCxRyA3ZAJCJlFkqXqlkwY4xDJgvN78hDCzzimSsKEbOe_2rSt6QZaHpOFSdYN7Xd7p6nuuwH1EOjQ0y4aTgdDF1gGegyu-6affbJxFMftztDGWTvWfUdr9N4Z_0juLLbBPP3llGzf5pvZe7T6WnzMylWkRa6GCHXKERnkUuXAU64Ky2plLVphGwTLC2m4qlUhJJg8b1jeQKFlUYvMSJ2lYkper3-170PwxlYH7_boTxWw6qKkuiiphKouSkb85YofMGhsrcdOu_B_I2C0AkqcAfLVX2c</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>CHAI, C.-Y</creator><creator>HUANG, J.-A</creator><creator>LAI, Y.-L</creator><creator>WU, J.-W</creator><creator>CHANG, C.-Y</creator><creator>CHAN, Y.-J</creator><creator>CHENG, H.-C</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1996</creationdate><title>Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier</title><author>CHAI, C.-Y ; HUANG, J.-A ; LAI, Y.-L ; WU, J.-W ; CHANG, C.-Y ; CHAN, Y.-J ; CHENG, H.-C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-ac62aa018458126259f0b5ffaf3fda1f294e25b59341e88d08d19c49b37e4c763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHAI, C.-Y</creatorcontrib><creatorcontrib>HUANG, J.-A</creatorcontrib><creatorcontrib>LAI, Y.-L</creatorcontrib><creatorcontrib>WU, J.-W</creatorcontrib><creatorcontrib>CHANG, C.-Y</creatorcontrib><creatorcontrib>CHAN, Y.-J</creatorcontrib><creatorcontrib>CHENG, H.-C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHAI, C.-Y</au><au>HUANG, J.-A</au><au>LAI, Y.-L</au><au>WU, J.-W</au><au>CHANG, C.-Y</au><au>CHAN, Y.-J</au><au>CHENG, H.-C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996</date><risdate>1996</risdate><volume>35</volume><issue>4A</issue><spage>2110</spage><epage>2111</epage><pages>2110-2111</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n
+
-GaAs with the Si-doping concentration of about 2×10
18
cm
-3
. The minimum specific contact resistivity as low as 1.2×10
-7
Ω·cm
2
can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.35.2110</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996, Vol.35 (4A), p.2110-2111 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier |
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