New developments of less toxic group-V precursors for the metalorganic vapour phase epitaxy of III-V-semiconductors : In-situ-formation of As-H functions by thermal β-elimination of specific As-trialkyl compounds

Thermal decomposition studies and low pressure metalorganic vapour phase epitaxy (MOVPE) growth experiments have been performed using novel, less toxic arsinetrialkyl sources, which decompose by the β-hydride elimination process. Therefore, As–H functions are automatically formed in the hot temperat...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996-04, Vol.35 (4A), p.2035-2042
Hauptverfasser:	ZIMMERMANN, G, SPIKA, Z, MARSCHNER, T, STOLZ, W, GÖBEL, E. O, GIMMNICH, P, BECKER, R, LORBERTH, J, GREILING, A, SALZMANN, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
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