Stress in Amorphous SiO x :H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Amorphous SiO x (a- SiO x ) films were deposited on single-crystal Si (c-Si) and fused quartz substrates by a plasma-enhanced chemical vapor deposition technique using SiH 4 –O 2 mixtures. For stoichiometric films (a- SiO 2 ) deposited on c-Si substrates, the observed stress is compressive, and its...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1996-03, Vol.35 (3R), p.1873
Hauptverfasser:	Le-Nian He, Le-Nian He, Takao Inokuma, Takao Inokuma, Yoshihiro Kurata, Yoshihiro Kurata, Seiichi Hasegawa, Seiichi Hasegawa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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