Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film
Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×10 20 cm -3 . The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and anneal...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1996-03, Vol.35 (3), p.1624-1629 |
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| container_end_page | 1629 |
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| container_issue | 3 |
| container_start_page | 1624 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | SAKAGUCHI, M YOKOTA, K SHIOMI, A MORI, H CHAYAHARA, A FUJII, Y HIRAI, K TAKANO, H KUMAGAI, M |
| description | Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×10
20
cm
-3
. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S
+
implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping. |
| doi_str_mv | 10.1143/jjap.35.1624 |
| format | Article |
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20
cm
-3
. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S
+
implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.35.1624</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Conductivity phenomena in semiconductors and insulators ; Defects and impurities in crystals; microstructure ; Diffusion in solids ; Diffusion of impurities ; Doping and impurity implantation in iii-v and ii-vi semiconductors ; Electronic transport in condensed matter ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Physics ; Structure of solids and liquids; crystallography ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Japanese Journal of Applied Physics, 1996-03, Vol.35 (3), p.1624-1629</ispartof><rights>1996 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-400fb1ac33a26a330814e948b546765239d818074332ed25eba8a7f7c49202413</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3038338$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SAKAGUCHI, M</creatorcontrib><creatorcontrib>YOKOTA, K</creatorcontrib><creatorcontrib>SHIOMI, A</creatorcontrib><creatorcontrib>MORI, H</creatorcontrib><creatorcontrib>CHAYAHARA, A</creatorcontrib><creatorcontrib>FUJII, Y</creatorcontrib><creatorcontrib>HIRAI, K</creatorcontrib><creatorcontrib>TAKANO, H</creatorcontrib><creatorcontrib>KUMAGAI, M</creatorcontrib><title>Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film</title><title>Japanese Journal of Applied Physics</title><description>Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×10
20
cm
-3
. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S
+
implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Diffusion in solids</subject><subject>Diffusion of impurities</subject><subject>Doping and impurity implantation in iii-v and ii-vi semiconductors</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kNFLwzAQxoMoOKdv_gF58NHWJJe0mW9l6uYYKMw9l1uauIyuLU0n-N-bMRUOjo_73fHdR8gtZynnEh52O-xSUCnPhDwjIw4yTyTL1DkZMSZ4IidCXJKrEHZRZkryEVk_eecOwX_5wdtAsakomuFPto6uqN93NTaDrahvhpbOsAh02Pbt4XMbeVqEpGq7OMVk5R_n1Pl6f00uHNbB3vz2MVm_PH9M58nybfY6LZaJAaGH6I25DUcDgCJDAKa5tBOpN0pmeaYETCrNNcslgLCVUHaDGnOXm_gIE5LDmNyf7pq-DaG3rux6v8f-u-SsPEZSLhbFewmqPEYS8bsT3mEwWLseG-PD_w4w0BDrB4NPXwc</recordid><startdate>19960301</startdate><enddate>19960301</enddate><creator>SAKAGUCHI, M</creator><creator>YOKOTA, K</creator><creator>SHIOMI, A</creator><creator>MORI, H</creator><creator>CHAYAHARA, A</creator><creator>FUJII, Y</creator><creator>HIRAI, K</creator><creator>TAKANO, H</creator><creator>KUMAGAI, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19960301</creationdate><title>Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film</title><author>SAKAGUCHI, M ; YOKOTA, K ; SHIOMI, A ; MORI, H ; CHAYAHARA, A ; FUJII, Y ; HIRAI, K ; TAKANO, H ; KUMAGAI, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-400fb1ac33a26a330814e948b546765239d818074332ed25eba8a7f7c49202413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Diffusion in solids</topic><topic>Diffusion of impurities</topic><topic>Doping and impurity implantation in iii-v and ii-vi semiconductors</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SAKAGUCHI, M</creatorcontrib><creatorcontrib>YOKOTA, K</creatorcontrib><creatorcontrib>SHIOMI, A</creatorcontrib><creatorcontrib>MORI, H</creatorcontrib><creatorcontrib>CHAYAHARA, A</creatorcontrib><creatorcontrib>FUJII, Y</creatorcontrib><creatorcontrib>HIRAI, K</creatorcontrib><creatorcontrib>TAKANO, H</creatorcontrib><creatorcontrib>KUMAGAI, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SAKAGUCHI, M</au><au>YOKOTA, K</au><au>SHIOMI, A</au><au>MORI, H</au><au>CHAYAHARA, A</au><au>FUJII, Y</au><au>HIRAI, K</au><au>TAKANO, H</au><au>KUMAGAI, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996-03-01</date><risdate>1996</risdate><volume>35</volume><issue>3</issue><spage>1624</spage><epage>1629</epage><pages>1624-1629</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Sulfur (S) ions are implanted at 500 keV into GaAs through 120 nm a-Si:H films doped with arsenic atoms at a concentration of 2×10
20
cm
-3
. The samples are annealed in Ar gas at temperatures of 700–1000°C for 15 min. The sheet carrier concentration increases with increasing implant dose and annealing temperature. The diffusivity of the S atoms decreases with increasing implant dose. Silicon (Si) atoms are also doped from the a-Si:H films into GaAs during annealing and S
+
implantation. The distribution of the Si atoms becomes slightly shallower as the implant dose increases. The carrier concentrations, however, are left unchanged by Si doping.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.35.1624</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996-03, Vol.35 (3), p.1624-1629 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_35_1624 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Conductivity phenomena in semiconductors and insulators Defects and impurities in crystals microstructure Diffusion in solids Diffusion of impurities Doping and impurity implantation in iii-v and ii-vi semiconductors Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics Structure of solids and liquids crystallography Transport properties of condensed matter (nonelectronic) |
| title | Diffusivities and activities of S implanted into GaAs through an As-doped a-Si:H film |
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