Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl 2 gas. In this approach, we also make use of HCl g...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995, Vol.34 (9B), p.L1198
Hauptverfasser:	Go Yusa, Go Yusa, Hiroshi Noge, Hiroshi Noge, Yutaka Kadoya, Yutaka Kadoya, Takao Someya, Takao Someya, Tadatomo Suga, Tadatomo Suga, Pierre Petroff, Pierre Petroff, Hiroyuki Sakaki, Hiroyuki Sakaki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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