Very low temperature deposition of polycrystalline Si films fabricated by hydrogen dilution with electron cyclotron resonance chemical vapor deposition

Characteristics of polycrystalline silicon films deposited both on SiO 2 and Corning 7059 glass substrates are presented in this paper. The silicon films were deposited by a hydrogen dilution method using electron cyclotron resonance chemical vapor deposition at 250° C without any thermal or laser a...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995-02, Vol.34 (2B), p.927-931
Hauptverfasser:	WANG, K.-C, CHENG, K.-L, JIANG, Y.-L, YEW, T.-R, HWANG, H.-L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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