New P-MOSFET hot-carrier degradation model for bi-directional operation

It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional opera...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995, Vol.34 (2B), p.889-894
Hauptverfasser:	SHIMIZU, S, TANIZAWA, M, KUSUNOKI, S, INUISHI, M, TSUBOUCHI, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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