New P-MOSFET hot-carrier degradation model for bi-directional operation

New P-MOSFET hot-carrier degradation model for bi-directional operation

It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional opera...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995, Vol.34 (2B), p.889-894
Hauptverfasser: SHIMIZU, S, TANIZAWA, M, KUSUNOKI, S, INUISHI, M, TSUBOUCHI, N
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 894
container_issue 2B
container_start_page 889
container_title Japanese Journal of Applied Physics
container_volume 34
creator SHIMIZU, S
TANIZAWA, M
KUSUNOKI, S
INUISHI, M
TSUBOUCHI, N
description It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional operation, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barrier lowering (TIBL), the channel length modulation (CLM) due to electron traps in the oxide, and the mobility modulation (MM) due to interface state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in addition to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and saturation regions but also in the forward and reverse operation modes.
doi_str_mv 10.1143/JJAP.34.889
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_34_889</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3473546</sourcerecordid><originalsourceid>FETCH-LOGICAL-c298t-493d16e5ea0af38d2b34ce8a0b7f2a4080272da66aed5b501fb02417edf195653</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFZP_oE9eJON-53kWIpWS7UF9Rwmu7MaSZuwWxD_fRMrnoYZnvdleAi5FjwTQqu75XK2yZTOiqI8IROhdM40t-aUTDiXgulSynNykdLXsFqjxYQsXvCbbtjz-vXh_o1-dnvmIMYGI_X4EcHDvul2dNt5bGnoIq0b5puIbjxDS7se4y9ySc4CtAmv_uaUvA-F80e2Wi-e5rMVc7Is9sMHyguLBoFDUIWXtdIOC-B1HiRoXnCZSw_WAnpTGy5CzaUWOfogSmONmpLbY6-LXUoRQ9XHZgvxpxK8Gh1Uo4NK6WpwMNA3R7qH5KANEXauSf-RwY8y2qoDPXhbIg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>New P-MOSFET hot-carrier degradation model for bi-directional operation</title><source>Institute of Physics Journals</source><creator>SHIMIZU, S ; TANIZAWA, M ; KUSUNOKI, S ; INUISHI, M ; TSUBOUCHI, N</creator><creatorcontrib>SHIMIZU, S ; TANIZAWA, M ; KUSUNOKI, S ; INUISHI, M ; TSUBOUCHI, N</creatorcontrib><description>It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional operation, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barrier lowering (TIBL), the channel length modulation (CLM) due to electron traps in the oxide, and the mobility modulation (MM) due to interface state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in addition to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and saturation regions but also in the forward and reverse operation modes.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.34.889</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Japanese Journal of Applied Physics, 1995, Vol.34 (2B), p.889-894</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c298t-493d16e5ea0af38d2b34ce8a0b7f2a4080272da66aed5b501fb02417edf195653</citedby><cites>FETCH-LOGICAL-c298t-493d16e5ea0af38d2b34ce8a0b7f2a4080272da66aed5b501fb02417edf195653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,4010,4036,4037,23909,23910,25118,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3473546$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIMIZU, S</creatorcontrib><creatorcontrib>TANIZAWA, M</creatorcontrib><creatorcontrib>KUSUNOKI, S</creatorcontrib><creatorcontrib>INUISHI, M</creatorcontrib><creatorcontrib>TSUBOUCHI, N</creatorcontrib><title>New P-MOSFET hot-carrier degradation model for bi-directional operation</title><title>Japanese Journal of Applied Physics</title><description>It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional operation, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barrier lowering (TIBL), the channel length modulation (CLM) due to electron traps in the oxide, and the mobility modulation (MM) due to interface state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in addition to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and saturation regions but also in the forward and reverse operation modes.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFZP_oE9eJON-53kWIpWS7UF9Rwmu7MaSZuwWxD_fRMrnoYZnvdleAi5FjwTQqu75XK2yZTOiqI8IROhdM40t-aUTDiXgulSynNykdLXsFqjxYQsXvCbbtjz-vXh_o1-dnvmIMYGI_X4EcHDvul2dNt5bGnoIq0b5puIbjxDS7se4y9ySc4CtAmv_uaUvA-F80e2Wi-e5rMVc7Is9sMHyguLBoFDUIWXtdIOC-B1HiRoXnCZSw_WAnpTGy5CzaUWOfogSmONmpLbY6-LXUoRQ9XHZgvxpxK8Gh1Uo4NK6WpwMNA3R7qH5KANEXauSf-RwY8y2qoDPXhbIg</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>SHIMIZU, S</creator><creator>TANIZAWA, M</creator><creator>KUSUNOKI, S</creator><creator>INUISHI, M</creator><creator>TSUBOUCHI, N</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1995</creationdate><title>New P-MOSFET hot-carrier degradation model for bi-directional operation</title><author>SHIMIZU, S ; TANIZAWA, M ; KUSUNOKI, S ; INUISHI, M ; TSUBOUCHI, N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c298t-493d16e5ea0af38d2b34ce8a0b7f2a4080272da66aed5b501fb02417edf195653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHIMIZU, S</creatorcontrib><creatorcontrib>TANIZAWA, M</creatorcontrib><creatorcontrib>KUSUNOKI, S</creatorcontrib><creatorcontrib>INUISHI, M</creatorcontrib><creatorcontrib>TSUBOUCHI, N</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHIMIZU, S</au><au>TANIZAWA, M</au><au>KUSUNOKI, S</au><au>INUISHI, M</au><au>TSUBOUCHI, N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New P-MOSFET hot-carrier degradation model for bi-directional operation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995</date><risdate>1995</risdate><volume>34</volume><issue>2B</issue><spage>889</spage><epage>894</epage><pages>889-894</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>It has been recognized that the building in reliability for hot-carrier is important in submicrometer p-MOSFET's as well as n-MOSFET's for use in the design of ULSI's. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET's for bi-directional operation, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barrier lowering (TIBL), the channel length modulation (CLM) due to electron traps in the oxide, and the mobility modulation (MM) due to interface state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in addition to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and saturation regions but also in the forward and reverse operation modes.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.34.889</doi><tpages>6</tpages></addata></record>
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title New P-MOSFET hot-carrier degradation model for bi-directional operation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T02%3A20%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=New%20P-MOSFET%20hot-carrier%20degradation%20model%20for%20bi-directional%20operation&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=SHIMIZU,%20S&rft.date=1995&rft.volume=34&rft.issue=2B&rft.spage=889&rft.epage=894&rft.pages=889-894&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/JJAP.34.889&rft_dat=%3Cpascalfrancis_cross%3E3473546%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true