The impact of nitrogen implantation into highly doped polysilicon gates for highly reliable and high-performance sub-quarter-micron dual-gate complementary metal oxide semiconductor

We studied the effects of nitrogen implantation into highly doped polysilicon gates in detail. It was found that highly arsenic-doped polysilicon gates caused degradation of gate oxide films and highly boron-doped polysilicon gates resulted in a shift of threshold voltage by boron penetration. Nitro...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995-02, Vol.34 (2B), p.771-775
Hauptverfasser:	KUROI, T, KOBAYASHI, M, SHIRAHATA, M, OKUMURA, Y, KUSUNOKI, S, INUISHI, M, TSUBOUCHI, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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