Effect of lens aberration on resist pattern profiles in edge-line phase-shift method

In edge-line phase-shift lithography, asymmetrical resist patterns formed by both sides of shifter edges have been observed in the case of a narrow shifter. The effect of phase error, shifter width and shifter edge angle on resist pattern profiles has been investigated by simulations and experiments...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995, Vol.34 (9A), p.5043-5048
Hauptverfasser:	NAKATANI, M, KOJIMA, Y, NAKANO, H, KAMON, K, SATO, K, TAKANO, H, ISHIHARA, O
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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