Electrical properties of ultralarge grain polycrystalline silicon film produced by excimer-laser recrystallization method

Electrical properties have been evaluated for polysilicon films from temperature dependence of the field-effect mobility. Density of the defect states at the grain boundary (GB) could be calculated as a function of energy for vacuum-, molecular-hydrogen- and atomic-hydrogen-annealed films. Defect states were distributed strongly near 0.14 eV below the conduction band and decreased steeply with more closer to the mid-gap. The GB was found to have no serious effect on electron and hole transport characteristics after hydrogenation.