Effect of Native Oxide upon Formation of Amorphous SiO x Layer at the Interface of Directly Bonded Silicon Wafers

Effect of Native Oxide upon Formation of Amorphous SiO x Layer at the Interface of Directly Bonded Silicon Wafers

We have investigated the interface of directly bonded Czochralski silicon wafers with various thicknesses of initially grown native oxide film using high-resolution transmission electron microscopy (HR-TEM). It was found that the volume of the amorphous SiO x layer formed at the bonded interface dec...

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Veröffentlicht in:Japanese Journal of Applied Physics 1995-02, Vol.34 (2R), p.425
Hauptverfasser: Ishigami, Shun-ichiro, Kondoh, Hideyuki, Ryuta, Jiro, Kawai, Yukio, Hisashi Furuya, Hisashi Furuya
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container_issue 2R
container_start_page 425
container_title Japanese Journal of Applied Physics
container_volume 34
creator Ishigami, Shun-ichiro
Kondoh, Hideyuki
Ryuta, Jiro
Kawai, Yukio
Hisashi Furuya, Hisashi Furuya
description We have investigated the interface of directly bonded Czochralski silicon wafers with various thicknesses of initially grown native oxide film using high-resolution transmission electron microscopy (HR-TEM). It was found that the volume of the amorphous SiO x layer formed at the bonded interface decreased as the native oxide film thickness decreased. The estimated total number of oxygen atoms in the amorphous layer from HR-TEM observation was in fairly good agreement with the total number of oxygen atoms in the native oxide film. It is concluded, therefore, that the initial stage of the formation of the amorphous SiO x layer is mainly governed by the initially grown native oxide.
doi_str_mv 10.1143/JJAP.34.425
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title Effect of Native Oxide upon Formation of Amorphous SiO x Layer at the Interface of Directly Bonded Silicon Wafers
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