Anisotropic diffusion of Si adsorbates on a Si(001) surface
The behavior of Si adsorbates evaporated on a Si(001) surface is studied by tracing their diffusion caused by radiative heating. A reflection electron microscope (REM) is used to observe denuded zones that are created at the terrace edge and grow with heating time. Diffusion constants of Si adsorbat...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995-07, Vol.34 (7A), p.3637-3641 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | DOI, T ICHIKAWA, M |
| description | The behavior of Si adsorbates evaporated on a Si(001) surface is studied by tracing their diffusion caused by radiative heating. A reflection electron microscope (REM) is used to observe denuded zones that are created at the terrace edge and grow with heating time. Diffusion constants of Si adsorbates are determined using the denuded zone widths on a Si(001) surface. The diffusion constants on the 2×1 terrace have directions parallel to a surface dimer connected to two nearest-neighbor atoms on the surface. Similarly, the diffusion constants on the 1×2 terrace have directions perpendicular to the dimer. Diffusion constants in the opposite directions are the same on both structures, so the isotropic diffusions in the opposite directions are observed on a Si(001) surface:
u
D
2×1
=
d
D
2×1
=
D
2×1
and
u
D
1×2
=
d
D
1×2
=
D
1×2
. The index u indicates diffusion from the down-side to the up-side and d vice versa. However, a difference in diffusion constants between
D
2×1
and
D
1×2
is observed. It is concluded that
D
1×2
is about 5-6 times as large as
D
2×1
on the Si(001) surface. |
| doi_str_mv | 10.1143/JJAP.34.3637 |
| format | Article |
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u
D
2×1
=
d
D
2×1
=
D
2×1
and
u
D
1×2
=
d
D
1×2
=
D
1×2
. The index u indicates diffusion from the down-side to the up-side and d vice versa. However, a difference in diffusion constants between
D
2×1
and
D
1×2
is observed. It is concluded that
D
1×2
is about 5-6 times as large as
D
2×1
on the Si(001) surface.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.34.3637</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Diffusion in solids ; Diffusion of impurities ; Diffusion; interface formation ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.3637-3641</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-e62779fac88570109aeba64b62882391fe168a9965052bf77555237353d4645d3</citedby><cites>FETCH-LOGICAL-c346t-e62779fac88570109aeba64b62882391fe168a9965052bf77555237353d4645d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3601168$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>DOI, T</creatorcontrib><creatorcontrib>ICHIKAWA, M</creatorcontrib><title>Anisotropic diffusion of Si adsorbates on a Si(001) surface</title><title>Japanese Journal of Applied Physics</title><description>The behavior of Si adsorbates evaporated on a Si(001) surface is studied by tracing their diffusion caused by radiative heating. A reflection electron microscope (REM) is used to observe denuded zones that are created at the terrace edge and grow with heating time. Diffusion constants of Si adsorbates are determined using the denuded zone widths on a Si(001) surface. The diffusion constants on the 2×1 terrace have directions parallel to a surface dimer connected to two nearest-neighbor atoms on the surface. Similarly, the diffusion constants on the 1×2 terrace have directions perpendicular to the dimer. Diffusion constants in the opposite directions are the same on both structures, so the isotropic diffusions in the opposite directions are observed on a Si(001) surface:
u
D
2×1
=
d
D
2×1
=
D
2×1
and
u
D
1×2
=
d
D
1×2
=
D
1×2
. The index u indicates diffusion from the down-side to the up-side and d vice versa. However, a difference in diffusion constants between
D
2×1
and
D
1×2
is observed. It is concluded that
D
1×2
is about 5-6 times as large as
D
2×1
on the Si(001) surface.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion in solids</subject><subject>Diffusion of impurities</subject><subject>Diffusion; interface formation</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLxDAUhYMoWEd3_oAuXCjYmuTm0eKqDL6GAQV1HdI2gcjYlNzOwn9vy4irwz2ccw8fIZeMlowJuNtsmrcSRAkK9BHJGAhdCKrkMcko5awQNeen5Azxaz6VFCwj980QME4pjqHL--D9HkMc8ujz95DbHmNq7eQwnz07W9eUspsc98nbzp2TE2936C7-dEU-Hx8-1s_F9vXpZd1siw6EmgqnuNb1XKgqqSmjtXWtVaJVvKo41Mw7pipb10pSyVuvtZSSgwYJvVBC9rAit4e_XYqIyXkzpvBt049h1CzgZgE3IMwCPsevDvHRYmd3PtmhC_jfAUXZPAi_2CpU0g</recordid><startdate>19950701</startdate><enddate>19950701</enddate><creator>DOI, T</creator><creator>ICHIKAWA, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19950701</creationdate><title>Anisotropic diffusion of Si adsorbates on a Si(001) surface</title><author>DOI, T ; ICHIKAWA, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-e62779fac88570109aeba64b62882391fe168a9965052bf77555237353d4645d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion in solids</topic><topic>Diffusion of impurities</topic><topic>Diffusion; interface formation</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DOI, T</creatorcontrib><creatorcontrib>ICHIKAWA, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DOI, T</au><au>ICHIKAWA, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anisotropic diffusion of Si adsorbates on a Si(001) surface</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995-07-01</date><risdate>1995</risdate><volume>34</volume><issue>7A</issue><spage>3637</spage><epage>3641</epage><pages>3637-3641</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The behavior of Si adsorbates evaporated on a Si(001) surface is studied by tracing their diffusion caused by radiative heating. A reflection electron microscope (REM) is used to observe denuded zones that are created at the terrace edge and grow with heating time. Diffusion constants of Si adsorbates are determined using the denuded zone widths on a Si(001) surface. The diffusion constants on the 2×1 terrace have directions parallel to a surface dimer connected to two nearest-neighbor atoms on the surface. Similarly, the diffusion constants on the 1×2 terrace have directions perpendicular to the dimer. Diffusion constants in the opposite directions are the same on both structures, so the isotropic diffusions in the opposite directions are observed on a Si(001) surface:
u
D
2×1
=
d
D
2×1
=
D
2×1
and
u
D
1×2
=
d
D
1×2
=
D
1×2
. The index u indicates diffusion from the down-side to the up-side and d vice versa. However, a difference in diffusion constants between
D
2×1
and
D
1×2
is observed. It is concluded that
D
1×2
is about 5-6 times as large as
D
2×1
on the Si(001) surface.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.34.3637</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.3637-3641 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Diffusion interface formation Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Transport properties of condensed matter (nonelectronic) |
| title | Anisotropic diffusion of Si adsorbates on a Si(001) surface |
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