High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces
High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995-06, Vol.34 (6B), p.3346-3350 |
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| container_end_page | 3350 |
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| container_issue | 6B |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | HOSHINO, T KOKUBUN, K KUMAMOTO, K ISHIMARU, T OHDOMARI, I |
| description | High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered 1×1 areas. The 5×5 and 9×9 areas shrink to disappear as a consequence of the growth of 7×7 domains. The smaller domain size and the faster shrinking speed of the 9×9 structure indicate its lower stability compared to the 5×5 structure. The 11×11 and 13×13 DAS structures were occasionally observed at above 500°C, however, suggesting lower stability than the (2
n
+1)×(2
n
+1) DAS structures with smaller
n
. The √3×√3 structures also appear at high-temperatures below 550°C, whereas the 2×2,
c
2×4, and
c
2×8 structures are observed only at room temperatures. Clear STM images of the √3×√3 structure can rarely be obtained at temperatures higher than 600°C, which is considered to be due to the thermally excited random motion of Si adatoms. |
| doi_str_mv | 10.1143/jjap.34.3346 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_34_3346</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3591295</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-54b7df6ad69f4fee12c83c2c25734555b336b8afac37e60ed309ffaee61c6e3b3</originalsourceid><addsrcrecordid>eNo9kE9Lw0AQxRdRsFZvfoA9eGjB1Gxmd9Mci6i1VBRaz2GzmW1T8s_dTaHf3oSKp5lh3nvwfoTcs3DGGIenw0G1M-AzAC4vyIgBjwMeSnFJRmEYsYAnUXRNbpw79KcUnI3IcVns9oHHqkWrfGeROq3quqh31Hd1jeWwVYW2jdNNe6KTzfZjSpvMoT0qXzQ1bQyt0CvnVVb2bm87PeQ42v9-Oqz1HnO6KSaMsSl1nTVKo7slV0aVDu_-5ph8v75sn5fB-vPt_XmxDjTMhQ8Ez-LcSJXLxHCDyCI9Bx3pSMTAhRAZgMzmqo-EGGWIOYSJMQpRMi0RMhiTx3PuUMBZNGlri0rZU8rCdGCWrlaLrxR4OjDr5Q9neat6DKWxqtaF-_eASFiUCPgFMElu0g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>HOSHINO, T ; KOKUBUN, K ; KUMAMOTO, K ; ISHIMARU, T ; OHDOMARI, I</creator><creatorcontrib>HOSHINO, T ; KOKUBUN, K ; KUMAMOTO, K ; ISHIMARU, T ; OHDOMARI, I</creatorcontrib><description>High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered 1×1 areas. The 5×5 and 9×9 areas shrink to disappear as a consequence of the growth of 7×7 domains. The smaller domain size and the faster shrinking speed of the 9×9 structure indicate its lower stability compared to the 5×5 structure. The 11×11 and 13×13 DAS structures were occasionally observed at above 500°C, however, suggesting lower stability than the (2
n
+1)×(2
n
+1) DAS structures with smaller
n
. The √3×√3 structures also appear at high-temperatures below 550°C, whereas the 2×2,
c
2×4, and
c
2×8 structures are observed only at room temperatures. Clear STM images of the √3×√3 structure can rarely be obtained at temperatures higher than 600°C, which is considered to be due to the thermally excited random motion of Si adatoms.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.34.3346</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Electron, ion, and scanning probe microscopy ; Exact sciences and technology ; Physics ; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc ; Solid surfaces and solid-solid interfaces ; Structure of solids and liquids; crystallography ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1995-06, Vol.34 (6B), p.3346-3350</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-54b7df6ad69f4fee12c83c2c25734555b336b8afac37e60ed309ffaee61c6e3b3</citedby><cites>FETCH-LOGICAL-c385t-54b7df6ad69f4fee12c83c2c25734555b336b8afac37e60ed309ffaee61c6e3b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23910,23911,25119,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3591295$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HOSHINO, T</creatorcontrib><creatorcontrib>KOKUBUN, K</creatorcontrib><creatorcontrib>KUMAMOTO, K</creatorcontrib><creatorcontrib>ISHIMARU, T</creatorcontrib><creatorcontrib>OHDOMARI, I</creatorcontrib><title>High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces</title><title>Japanese Journal of Applied Physics</title><description>High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered 1×1 areas. The 5×5 and 9×9 areas shrink to disappear as a consequence of the growth of 7×7 domains. The smaller domain size and the faster shrinking speed of the 9×9 structure indicate its lower stability compared to the 5×5 structure. The 11×11 and 13×13 DAS structures were occasionally observed at above 500°C, however, suggesting lower stability than the (2
n
+1)×(2
n
+1) DAS structures with smaller
n
. The √3×√3 structures also appear at high-temperatures below 550°C, whereas the 2×2,
c
2×4, and
c
2×8 structures are observed only at room temperatures. Clear STM images of the √3×√3 structure can rarely be obtained at temperatures higher than 600°C, which is considered to be due to the thermally excited random motion of Si adatoms.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electron, ion, and scanning probe microscopy</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9kE9Lw0AQxRdRsFZvfoA9eGjB1Gxmd9Mci6i1VBRaz2GzmW1T8s_dTaHf3oSKp5lh3nvwfoTcs3DGGIenw0G1M-AzAC4vyIgBjwMeSnFJRmEYsYAnUXRNbpw79KcUnI3IcVns9oHHqkWrfGeROq3quqh31Hd1jeWwVYW2jdNNe6KTzfZjSpvMoT0qXzQ1bQyt0CvnVVb2bm87PeQ42v9-Oqz1HnO6KSaMsSl1nTVKo7slV0aVDu_-5ph8v75sn5fB-vPt_XmxDjTMhQ8Ez-LcSJXLxHCDyCI9Bx3pSMTAhRAZgMzmqo-EGGWIOYSJMQpRMi0RMhiTx3PuUMBZNGlri0rZU8rCdGCWrlaLrxR4OjDr5Q9neat6DKWxqtaF-_eASFiUCPgFMElu0g</recordid><startdate>19950601</startdate><enddate>19950601</enddate><creator>HOSHINO, T</creator><creator>KOKUBUN, K</creator><creator>KUMAMOTO, K</creator><creator>ISHIMARU, T</creator><creator>OHDOMARI, I</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19950601</creationdate><title>High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces</title><author>HOSHINO, T ; KOKUBUN, K ; KUMAMOTO, K ; ISHIMARU, T ; OHDOMARI, I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-54b7df6ad69f4fee12c83c2c25734555b336b8afac37e60ed309ffaee61c6e3b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electron, ion, and scanning probe microscopy</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HOSHINO, T</creatorcontrib><creatorcontrib>KOKUBUN, K</creatorcontrib><creatorcontrib>KUMAMOTO, K</creatorcontrib><creatorcontrib>ISHIMARU, T</creatorcontrib><creatorcontrib>OHDOMARI, I</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HOSHINO, T</au><au>KOKUBUN, K</au><au>KUMAMOTO, K</au><au>ISHIMARU, T</au><au>OHDOMARI, I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995-06-01</date><risdate>1995</risdate><volume>34</volume><issue>6B</issue><spage>3346</spage><epage>3350</epage><pages>3346-3350</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100°C, 5×5 and 9×9 structures have been observed at 600°C, as well as the reconstructed 7×7 and disordered 1×1 areas. The 5×5 and 9×9 areas shrink to disappear as a consequence of the growth of 7×7 domains. The smaller domain size and the faster shrinking speed of the 9×9 structure indicate its lower stability compared to the 5×5 structure. The 11×11 and 13×13 DAS structures were occasionally observed at above 500°C, however, suggesting lower stability than the (2
n
+1)×(2
n
+1) DAS structures with smaller
n
. The √3×√3 structures also appear at high-temperatures below 550°C, whereas the 2×2,
c
2×4, and
c
2×8 structures are observed only at room temperatures. Clear STM images of the √3×√3 structure can rarely be obtained at temperatures higher than 600°C, which is considered to be due to the thermally excited random motion of Si adatoms.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.34.3346</doi><tpages>5</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Electron, ion, and scanning probe microscopy Exact sciences and technology Physics Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | High-temperature scanning tunneling microscopy (STM) observation of metastable structures on quenched Si(111) surfaces |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T23%3A33%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-temperature%20scanning%20tunneling%20microscopy%20(STM)%20observation%20of%20metastable%20structures%20on%20quenched%20Si(111)%20surfaces&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=HOSHINO,%20T&rft.date=1995-06-01&rft.volume=34&rft.issue=6B&rft.spage=3346&rft.epage=3350&rft.pages=3346-3350&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.34.3346&rft_dat=%3Cpascalfrancis_cross%3E3591295%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |