Direct observation of species liberated from GaAs native oxides during atomic hydrogen cleaning
A real-time mass spectroscopic observation of liberated species was carried out to investigate the mechanism of atomic-hydrogen-( H•)-induced deoxidation of GaAs native oxides. Atomic hydrogen treatment at 410°C caused, initially, the liberation of molecular arsenic ( As 2 /As 4 ), resulting in the...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994-05, Vol.33 (5A), p.L671-L674 |
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| container_end_page | L674 |
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| container_issue | 5A |
| container_start_page | L671 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | YAMADA, M IDE, Y |
| description | A real-time mass spectroscopic observation of liberated species was carried out to investigate the mechanism of atomic-hydrogen-( H•)-induced deoxidation of GaAs native oxides. Atomic hydrogen treatment at 410°C caused, initially, the liberation of molecular arsenic ( As
2
/As
4
), resulting in the removal of As oxides, which was then followed by the liberation of Ga
2
O, leading to complete deoxidation. These results indicate that the deoxidation proceeds through two stages. The main chemical reactions are As
2
O
x
+2
x
H•→
x
H
2
O+ As
2
/(1/2As
4
) in the first stage and Ga
2
O
3
+ 4H•→2H
2
O+ Ga
2
O in the second stage. |
| doi_str_mv | 10.1143/jjap.33.l671 |
| format | Article |
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2
/As
4
), resulting in the removal of As oxides, which was then followed by the liberation of Ga
2
O, leading to complete deoxidation. These results indicate that the deoxidation proceeds through two stages. The main chemical reactions are As
2
O
x
+2
x
H•→
x
H
2
O+ As
2
/(1/2As
4
) in the first stage and Ga
2
O
3
+ 4H•→2H
2
O+ Ga
2
O in the second stage.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.l671</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Analytical chemistry ; Chemistry ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Energy-conversion spectro-analytical methods (eg, photoacoustic, photothermal, and optogalvanic spectroscopic methods) ; Exact sciences and technology ; Materials science ; Physics ; Solid-fluid interfaces ; Spectrometric and optical methods ; Surface treatments ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1994-05, Vol.33 (5A), p.L671-L674</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c455t-8984d159e5b028bdb46a9281cc6941058f6db9addde05f722eea0af4f49993403</citedby><cites>FETCH-LOGICAL-c455t-8984d159e5b028bdb46a9281cc6941058f6db9addde05f722eea0af4f49993403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4083209$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YAMADA, M</creatorcontrib><creatorcontrib>IDE, Y</creatorcontrib><title>Direct observation of species liberated from GaAs native oxides during atomic hydrogen cleaning</title><title>Japanese Journal of Applied Physics</title><description>A real-time mass spectroscopic observation of liberated species was carried out to investigate the mechanism of atomic-hydrogen-( H•)-induced deoxidation of GaAs native oxides. Atomic hydrogen treatment at 410°C caused, initially, the liberation of molecular arsenic ( As
2
/As
4
), resulting in the removal of As oxides, which was then followed by the liberation of Ga
2
O, leading to complete deoxidation. These results indicate that the deoxidation proceeds through two stages. The main chemical reactions are As
2
O
x
+2
x
H•→
x
H
2
O+ As
2
/(1/2As
4
) in the first stage and Ga
2
O
3
+ 4H•→2H
2
O+ Ga
2
O in the second stage.</description><subject>Analytical chemistry</subject><subject>Chemistry</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Energy-conversion spectro-analytical methods (eg, photoacoustic, photothermal, and optogalvanic spectroscopic methods)</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Physics</subject><subject>Solid-fluid interfaces</subject><subject>Spectrometric and optical methods</subject><subject>Surface treatments</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAYhC0EEqWw8QM8MJLizzQeqwKFqhIMMEdv7NfFVRpHdkD03xNUxHQ63XM3HCHXnM04V_Jut4N-JuWsLef8hEy4VPNCsVKfkgljghfKCHFOLnLejbbUik9IfR8S2oHGJmP6giHEjkZPc482YKZtaDDBgI76FPd0BYtMu5H6Qhq_gxsJ95lCt6UwxH2w9OPgUtxiR22L0I3BJTnz0Ga8-tMpeX98eFs-FZuX1fNysSms0nooKlMpx7VB3TBRNa5RJRhRcWtLozjTlS9dY8A5h0z7uRCIwMArr4wxUjE5JbfHXZtizgl93aewh3SoOat_z6nX68VrLWW9Gc8Z8Zsj3kO20PoEnQ35v6NYJQUz8gdMc2Yl</recordid><startdate>19940501</startdate><enddate>19940501</enddate><creator>YAMADA, M</creator><creator>IDE, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940501</creationdate><title>Direct observation of species liberated from GaAs native oxides during atomic hydrogen cleaning</title><author>YAMADA, M ; IDE, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c455t-8984d159e5b028bdb46a9281cc6941058f6db9addde05f722eea0af4f49993403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Analytical chemistry</topic><topic>Chemistry</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Energy-conversion spectro-analytical methods (eg, photoacoustic, photothermal, and optogalvanic spectroscopic methods)</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Physics</topic><topic>Solid-fluid interfaces</topic><topic>Spectrometric and optical methods</topic><topic>Surface treatments</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAMADA, M</creatorcontrib><creatorcontrib>IDE, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAMADA, M</au><au>IDE, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct observation of species liberated from GaAs native oxides during atomic hydrogen cleaning</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994-05-01</date><risdate>1994</risdate><volume>33</volume><issue>5A</issue><spage>L671</spage><epage>L674</epage><pages>L671-L674</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A real-time mass spectroscopic observation of liberated species was carried out to investigate the mechanism of atomic-hydrogen-( H•)-induced deoxidation of GaAs native oxides. Atomic hydrogen treatment at 410°C caused, initially, the liberation of molecular arsenic ( As
2
/As
4
), resulting in the removal of As oxides, which was then followed by the liberation of Ga
2
O, leading to complete deoxidation. These results indicate that the deoxidation proceeds through two stages. The main chemical reactions are As
2
O
x
+2
x
H•→
x
H
2
O+ As
2
/(1/2As
4
) in the first stage and Ga
2
O
3
+ 4H•→2H
2
O+ Ga
2
O in the second stage.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.l671</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994-05, Vol.33 (5A), p.L671-L674 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_33_L671 |
| source | Institute of Physics Journals |
| subjects | Analytical chemistry Chemistry Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Energy-conversion spectro-analytical methods (eg, photoacoustic, photothermal, and optogalvanic spectroscopic methods) Exact sciences and technology Materials science Physics Solid-fluid interfaces Spectrometric and optical methods Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Direct observation of species liberated from GaAs native oxides during atomic hydrogen cleaning |
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