Atomically resolved image of cleaved GaAs(110) surface observed with an ultrahigh vacuum atomic force microscope

The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7±0.5 Å×4.0±0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating...

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Veröffentlicht in:Japanese Journal of Applied Physics 1994, Vol.33 (1A), p.L52-L54
Hauptverfasser: OHTA, M, SUGAWARA, Y, HONTANI, K, MORITA, S, OSAKA, F, SUZUKI, M, NAGAOKA, H, MISHIMA, S, OKADA, T
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container_end_page L54
container_issue 1A
container_start_page L52
container_title Japanese Journal of Applied Physics
container_volume 33
creator OHTA, M
SUGAWARA, Y
HONTANI, K
MORITA, S
OSAKA, F
SUZUKI, M
NAGAOKA, H
MISHIMA, S
OKADA, T
description The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7±0.5 Å×4.0±0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating semiconductor surfaces having dangling bonds on an atomic scale.
doi_str_mv 10.1143/jjap.33.l52
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subjects Condensed matter: structure, mechanical and thermal properties
Electron, ion, and scanning probe microscopy
Exact sciences and technology
Physics
Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc
Solid surfaces and solid-solid interfaces
Structure of solids and liquids
crystallography
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Atomically resolved image of cleaved GaAs(110) surface observed with an ultrahigh vacuum atomic force microscope
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