Atomically resolved image of cleaved GaAs(110) surface observed with an ultrahigh vacuum atomic force microscope

The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7±0.5 Å×4.0±0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (1A), p.L52-L54
Hauptverfasser:	OHTA, M, SUGAWARA, Y, HONTANI, K, MORITA, S, OSAKA, F, SUZUKI, M, NAGAOKA, H, MISHIMA, S, OKADA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Electron, ion, and scanning probe microscopy Exact sciences and technology Physics Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The first demonstration of atomic-resolution imaging of a GaAs(110) surface with an ultrahigh vacuum atomic force microscope (UHV AFM) is performed. A rectangular lattice with spacing of 5.7±0.5 Å×4.0±0.4 Å is resolved. This result suggests that the UHV AFM has potential capability for investigating semiconductor surfaces having dangling bonds on an atomic scale.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.33.l52