Preparation of Praseodymium-Doped Single Crystal Barium Fluoride Thin Film on CaF 2 by Chemical Vapor Deposition
Praseodymium(Pr)-doped BaF 2 (111) thin film was epitaxially grown on a CaF 2 (111) substrate by chemical vapor deposition. Fluorinated metal β-diketone chelates; Ba(dfhd) 2 and Pr(ppm) 3 were used as the source materials. The Pr doping could be controlled by changing the Pr source temperature and t...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994-03, Vol.33 (3A), p.L371 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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