A new GaAs field effect transistor (FET) with DIpole barrier (DIB)

A new GaAs field effect transistor (FET) with dipole-barrier (DIBFET) employing a delta- n (δ n ) layer and a delta- p (δ p ) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ n layer by the influence of the transver...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (1B), p.775-778
Hauptverfasser:	HYUN-RYONG CHO, KYE-IK JEON, SONG-CHEOL HONG, YOUNG-SE KWON
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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