A new GaAs field effect transistor (FET) with DIpole barrier (DIB)
A new GaAs field effect transistor (FET) with dipole-barrier (DIBFET) employing a delta- n (δ n ) layer and a delta- p (δ p ) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ n layer by the influence of the transver...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994, Vol.33 (1B), p.775-778 |
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| container_end_page | 778 |
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| container_issue | 1B |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | HYUN-RYONG CHO KYE-IK JEON SONG-CHEOL HONG YOUNG-SE KWON |
| description | A new GaAs field effect transistor (FET) with dipole-barrier (DIBFET) employing a delta-
n
(δ
n
) layer and a delta-
p
(δ
p
) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ
n
layer by the influence of the transverse electric field resulting from the dipole-barrier formation. This leads to the high electron concentration of 1.5×10
18
cm
-3
with the electron drift mobility of 3600 cm
2
/V·s in the undoped GaAs channel at room temperature. The fabricated GaAs DIBFET with 0.8 µm gate length shows the maximum value of extrinsic transconductance of 366 mS/mm. The drain current density is larger than 800 mA/mm. The current gain cutoff frequency
f
T
of 16.7 GHz and the maximum oscillation frequency
f
max
of 67 GHz are obtained. One-dimensional calculation of device characteristics is performed for the purpose of evaluating the device performance. |
| doi_str_mv | 10.1143/jjap.33.775 |
| format | Article |
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n
(δ
n
) layer and a delta-
p
(δ
p
) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ
n
layer by the influence of the transverse electric field resulting from the dipole-barrier formation. This leads to the high electron concentration of 1.5×10
18
cm
-3
with the electron drift mobility of 3600 cm
2
/V·s in the undoped GaAs channel at room temperature. The fabricated GaAs DIBFET with 0.8 µm gate length shows the maximum value of extrinsic transconductance of 366 mS/mm. The drain current density is larger than 800 mA/mm. The current gain cutoff frequency
f
T
of 16.7 GHz and the maximum oscillation frequency
f
max
of 67 GHz are obtained. One-dimensional calculation of device characteristics is performed for the purpose of evaluating the device performance.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.775</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.775-778</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c284t-b9cde38e7bd1f90d47c27214fa4a0225f317fe442522eef7514291b1e088380a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,778,782,787,788,4038,4039,23917,23918,25127,27911,27912</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4094951$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HYUN-RYONG CHO</creatorcontrib><creatorcontrib>KYE-IK JEON</creatorcontrib><creatorcontrib>SONG-CHEOL HONG</creatorcontrib><creatorcontrib>YOUNG-SE KWON</creatorcontrib><title>A new GaAs field effect transistor (FET) with DIpole barrier (DIB)</title><title>Japanese Journal of Applied Physics</title><description>A new GaAs field effect transistor (FET) with dipole-barrier (DIBFET) employing a delta-
n
(δ
n
) layer and a delta-
p
(δ
p
) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ
n
layer by the influence of the transverse electric field resulting from the dipole-barrier formation. This leads to the high electron concentration of 1.5×10
18
cm
-3
with the electron drift mobility of 3600 cm
2
/V·s in the undoped GaAs channel at room temperature. The fabricated GaAs DIBFET with 0.8 µm gate length shows the maximum value of extrinsic transconductance of 366 mS/mm. The drain current density is larger than 800 mA/mm. The current gain cutoff frequency
f
T
of 16.7 GHz and the maximum oscillation frequency
f
max
of 67 GHz are obtained. One-dimensional calculation of device characteristics is performed for the purpose of evaluating the device performance.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9j09LwzAYxoMoWKcnv0AOHhzSmTd5s7THbtO5MdCDnkuavsGWupWkMPz2ViaeHh6eP_Bj7BbEDADVY9vafqbUzBh9xhJQaFIUc33OEiEkpJhLecmuYmxHO9cICVsUfE9HvrZF5L6hrubkPbmBD8HuYxOHQ-D3z0_vU35shk--2vSHjnhlQ2hoTFabxfSaXXjbRbr50wn7GAfLl3T3ut4si13qZIZDWuWuJpWRqWrwuajROGkkoLdohZTaKzCeEKWWksgbDShzqIBElqlMWDVhD6dfFw4xBvJlH5ovG75LEOUvfrndFm-lUuWIP7bvTu3eRmc7P-K4Jv5PUOSYa1A_DhhXQw</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>HYUN-RYONG CHO</creator><creator>KYE-IK JEON</creator><creator>SONG-CHEOL HONG</creator><creator>YOUNG-SE KWON</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1994</creationdate><title>A new GaAs field effect transistor (FET) with DIpole barrier (DIB)</title><author>HYUN-RYONG CHO ; KYE-IK JEON ; SONG-CHEOL HONG ; YOUNG-SE KWON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-b9cde38e7bd1f90d47c27214fa4a0225f317fe442522eef7514291b1e088380a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HYUN-RYONG CHO</creatorcontrib><creatorcontrib>KYE-IK JEON</creatorcontrib><creatorcontrib>SONG-CHEOL HONG</creatorcontrib><creatorcontrib>YOUNG-SE KWON</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HYUN-RYONG CHO</au><au>KYE-IK JEON</au><au>SONG-CHEOL HONG</au><au>YOUNG-SE KWON</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new GaAs field effect transistor (FET) with DIpole barrier (DIB)</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994</date><risdate>1994</risdate><volume>33</volume><issue>1B</issue><spage>775</spage><epage>778</epage><pages>775-778</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A new GaAs field effect transistor (FET) with dipole-barrier (DIBFET) employing a delta-
n
(δ
n
) layer and a delta-
p
(δ
p
) layer is proposed and fabricated. Electrons are confined in the upper undoped-GaAs layer (the channel layer) rather than around the δ
n
layer by the influence of the transverse electric field resulting from the dipole-barrier formation. This leads to the high electron concentration of 1.5×10
18
cm
-3
with the electron drift mobility of 3600 cm
2
/V·s in the undoped GaAs channel at room temperature. The fabricated GaAs DIBFET with 0.8 µm gate length shows the maximum value of extrinsic transconductance of 366 mS/mm. The drain current density is larger than 800 mA/mm. The current gain cutoff frequency
f
T
of 16.7 GHz and the maximum oscillation frequency
f
max
of 67 GHz are obtained. One-dimensional calculation of device characteristics is performed for the purpose of evaluating the device performance.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.775</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.775-778 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_33_775 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | A new GaAs field effect transistor (FET) with DIpole barrier (DIB) |
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