Sub 20 nm stitching and overlay for nano lithography applications

Sub 20 nm stitching and overlay for nano lithography applications

The typical placement, stitching and overlay performance of high resolution electron beam lithography systems is not compatible with the minimum linewidth which can be achieved. Linewidths of 20 nm or less can be obtained, but placement accuracy is typically 3 times higher. The major components in t...

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Veröffentlicht in:Japanese Journal of Applied Physics 1994, Vol.33 (12B), p.6971-6975
Hauptverfasser: KOEK, B. H, CHISHOLM, T, ROMIJN, J, VAN RUN, A. J
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 6975
container_issue 12B
container_start_page 6971
container_title Japanese Journal of Applied Physics
container_volume 33
creator KOEK, B. H
CHISHOLM, T
ROMIJN, J
VAN RUN, A. J
description The typical placement, stitching and overlay performance of high resolution electron beam lithography systems is not compatible with the minimum linewidth which can be achieved. Linewidths of 20 nm or less can be obtained, but placement accuracy is typically 3 times higher. The major components in the error distribution of the stitching and overlay performance of the Leica EBPG-5FE have been analysed and indicate that the number of stage movements and stage reproducibility are the predominant factors in the error budget. A direct write algorithm has been developed which reduces the influence of the stage. The calculated 3σ stitching and overlay errors for this new algorithm are 14 nm. Experimental results showed 8 nm stitching and 10 nm overlay (3σ), obtained in a 546 µ m field.
doi_str_mv 10.1143/JJAP.33.6971
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subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Sub 20 nm stitching and overlay for nano lithography applications
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