Cell projection lithography with scattering contrast
A scattering-type cell projection method is proposed and its characteristics are estimated by simulation and experiment. In this method, a mask consisting of thin scatterers and apertures is used to shape an electron beam. Thus, this method has advantages over the conventional cell projection method...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994-12, Vol.33 (12B), p.6940-6945 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 6945 |
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| container_issue | 12B |
| container_start_page | 6940 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | SOHDA, Y SOMEDA, Y SATOH, H NAKAYAMA, Y SAITOU, N ITOH, H |
| description | A scattering-type cell projection method is proposed and its characteristics
are estimated by simulation and experiment. In this method, a mask consisting of thin
scatterers and apertures is used to shape an electron beam. Thus, this method has
advantages over the conventional cell projection method. First, a high aspect ratio
is not necessary to fabricate the mask. Thus, the mask pattern is easily fabricated
and its experimental dimensional accuracy is better than 0.2 µ m. Second,
the simulated heat deposition on the mask drastically decreases. In addition, simulation
and experiment show good contrast of over 10
5
related to using a limiting aperture to
intercept scattered electrons. As a result, this method is considered to be a key
technology in future electron beam lithography systems. |
| doi_str_mv | 10.1143/jjap.33.6940 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_33_6940</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3432186</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-28ea1743167aa5e7c8de398b5c501392af6b4ac24a257e62b46ea14c7080e0063</originalsourceid><addsrcrecordid>eNo9T01LxDAUDKJgXb35A3rwaGuS95K0x6X4tSzoQc_lNaa7LbUtSUD239tlxdPMwMwww9it4LkQCA99T3MOkOsS-RlLBKDJkGt1zhLOpciwlPKSXYXQL1IrFAnDyg1DOvupdzZ205gOXdxPO0_z_pD-LDwNlmJ0vht3qZ3G6CnEa3bR0hDczR-u2OfT40f1km3fnl-r9TazADxmsnAkDILQhkg5Y4svB2XRKKu4gFJSqxskK5GkMk7LBvUSQGt4wR3nGlbs_tRr_RSCd209--6b_KEWvD4-rjeb9XsNUB8fL_a7k32mZfTQehptF_4zgCBFoeEXr_ZVxw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Cell projection lithography with scattering contrast</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>SOHDA, Y ; SOMEDA, Y ; SATOH, H ; NAKAYAMA, Y ; SAITOU, N ; ITOH, H</creator><creatorcontrib>SOHDA, Y ; SOMEDA, Y ; SATOH, H ; NAKAYAMA, Y ; SAITOU, N ; ITOH, H</creatorcontrib><description>A scattering-type cell projection method is proposed and its characteristics
are estimated by simulation and experiment. In this method, a mask consisting of thin
scatterers and apertures is used to shape an electron beam. Thus, this method has
advantages over the conventional cell projection method. First, a high aspect ratio
is not necessary to fabricate the mask. Thus, the mask pattern is easily fabricated
and its experimental dimensional accuracy is better than 0.2 µ m. Second,
the simulated heat deposition on the mask drastically decreases. In addition, simulation
and experiment show good contrast of over 10
5
related to using a limiting aperture to
intercept scattered electrons. As a result, this method is considered to be a key
technology in future electron beam lithography systems.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.6940</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1994-12, Vol.33 (12B), p.6940-6945</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-28ea1743167aa5e7c8de398b5c501392af6b4ac24a257e62b46ea14c7080e0063</citedby><cites>FETCH-LOGICAL-c330t-28ea1743167aa5e7c8de398b5c501392af6b4ac24a257e62b46ea14c7080e0063</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3432186$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SOHDA, Y</creatorcontrib><creatorcontrib>SOMEDA, Y</creatorcontrib><creatorcontrib>SATOH, H</creatorcontrib><creatorcontrib>NAKAYAMA, Y</creatorcontrib><creatorcontrib>SAITOU, N</creatorcontrib><creatorcontrib>ITOH, H</creatorcontrib><title>Cell projection lithography with scattering contrast</title><title>Japanese Journal of Applied Physics</title><description>A scattering-type cell projection method is proposed and its characteristics
are estimated by simulation and experiment. In this method, a mask consisting of thin
scatterers and apertures is used to shape an electron beam. Thus, this method has
advantages over the conventional cell projection method. First, a high aspect ratio
is not necessary to fabricate the mask. Thus, the mask pattern is easily fabricated
and its experimental dimensional accuracy is better than 0.2 µ m. Second,
the simulated heat deposition on the mask drastically decreases. In addition, simulation
and experiment show good contrast of over 10
5
related to using a limiting aperture to
intercept scattered electrons. As a result, this method is considered to be a key
technology in future electron beam lithography systems.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9T01LxDAUDKJgXb35A3rwaGuS95K0x6X4tSzoQc_lNaa7LbUtSUD239tlxdPMwMwww9it4LkQCA99T3MOkOsS-RlLBKDJkGt1zhLOpciwlPKSXYXQL1IrFAnDyg1DOvupdzZ205gOXdxPO0_z_pD-LDwNlmJ0vht3qZ3G6CnEa3bR0hDczR-u2OfT40f1km3fnl-r9TazADxmsnAkDILQhkg5Y4svB2XRKKu4gFJSqxskK5GkMk7LBvUSQGt4wR3nGlbs_tRr_RSCd209--6b_KEWvD4-rjeb9XsNUB8fL_a7k32mZfTQehptF_4zgCBFoeEXr_ZVxw</recordid><startdate>19941201</startdate><enddate>19941201</enddate><creator>SOHDA, Y</creator><creator>SOMEDA, Y</creator><creator>SATOH, H</creator><creator>NAKAYAMA, Y</creator><creator>SAITOU, N</creator><creator>ITOH, H</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19941201</creationdate><title>Cell projection lithography with scattering contrast</title><author>SOHDA, Y ; SOMEDA, Y ; SATOH, H ; NAKAYAMA, Y ; SAITOU, N ; ITOH, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-28ea1743167aa5e7c8de398b5c501392af6b4ac24a257e62b46ea14c7080e0063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SOHDA, Y</creatorcontrib><creatorcontrib>SOMEDA, Y</creatorcontrib><creatorcontrib>SATOH, H</creatorcontrib><creatorcontrib>NAKAYAMA, Y</creatorcontrib><creatorcontrib>SAITOU, N</creatorcontrib><creatorcontrib>ITOH, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SOHDA, Y</au><au>SOMEDA, Y</au><au>SATOH, H</au><au>NAKAYAMA, Y</au><au>SAITOU, N</au><au>ITOH, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cell projection lithography with scattering contrast</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994-12-01</date><risdate>1994</risdate><volume>33</volume><issue>12B</issue><spage>6940</spage><epage>6945</epage><pages>6940-6945</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A scattering-type cell projection method is proposed and its characteristics
are estimated by simulation and experiment. In this method, a mask consisting of thin
scatterers and apertures is used to shape an electron beam. Thus, this method has
advantages over the conventional cell projection method. First, a high aspect ratio
is not necessary to fabricate the mask. Thus, the mask pattern is easily fabricated
and its experimental dimensional accuracy is better than 0.2 µ m. Second,
the simulated heat deposition on the mask drastically decreases. In addition, simulation
and experiment show good contrast of over 10
5
related to using a limiting aperture to
intercept scattered electrons. As a result, this method is considered to be a key
technology in future electron beam lithography systems.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.6940</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994-12, Vol.33 (12B), p.6940-6945 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_33_6940 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Cell projection lithography with scattering contrast |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T18%3A44%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cell%20projection%20lithography%20with%20scattering%20contrast&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=SOHDA,%20Y&rft.date=1994-12-01&rft.volume=33&rft.issue=12B&rft.spage=6940&rft.epage=6945&rft.pages=6940-6945&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.33.6940&rft_dat=%3Cpascalfrancis_cross%3E3432186%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |