Surface morphology of lead-based thin films and their properties
Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO 2 /Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1994-09, Vol.33 (9B), p.5196-5200 |
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| container_issue | 9B |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | ATSUKI, T SOYAMA, N SASAKI, G YONEZAWA, T OGI, K SAMESHIMA, K HOSHIBA, K NAKAO, Y KAMISAWA, A |
| description | Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO
2
/Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate. |
| doi_str_mv | 10.1143/jjap.33.5196 |
| format | Article |
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2
/Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.5196</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1994-09, Vol.33 (9B), p.5196-5200</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-382240e97c1dc5e77cdb7018e5cebd2b556491e7af29a5b2aaf11447d7d08b723</citedby><cites>FETCH-LOGICAL-c328t-382240e97c1dc5e77cdb7018e5cebd2b556491e7af29a5b2aaf11447d7d08b723</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>310,311,315,781,785,790,791,23934,23935,25144,27928,27929</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3308273$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ATSUKI, T</creatorcontrib><creatorcontrib>SOYAMA, N</creatorcontrib><creatorcontrib>SASAKI, G</creatorcontrib><creatorcontrib>YONEZAWA, T</creatorcontrib><creatorcontrib>OGI, K</creatorcontrib><creatorcontrib>SAMESHIMA, K</creatorcontrib><creatorcontrib>HOSHIBA, K</creatorcontrib><creatorcontrib>NAKAO, Y</creatorcontrib><creatorcontrib>KAMISAWA, A</creatorcontrib><title>Surface morphology of lead-based thin films and their properties</title><title>Japanese Journal of Applied Physics</title><description>Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO
2
/Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9j1FLwzAUhYMoWKdv_oA8-Ghnkps07ZtjOHUMFNTncpvcuI6uLcl82L93Y-LT4YNzDnyM3UoxlVLDw2aD4xRgamRVnLFMgra5FoU5Z5kQSua6UuqSXaW0OWBhtMzY48dPDOiIb4c4rodu-N7zIfCO0OcNJvJ8t257Htpumzj2R6Q28jEOI8VdS-maXQTsEt385YR9LZ4-5y_56u35dT5b5Q5UucuhVEoLqqyT3hmy1vnGClmScdR41RhT6EqSxaAqNI1CDAclbb31omysggm7P_26OKQUKdRjbLcY97UU9dG-Xi5n7zVAfbQ_1O9O9RGTwy5E7F2b_jcAolQW4BdDPFov</recordid><startdate>19940901</startdate><enddate>19940901</enddate><creator>ATSUKI, T</creator><creator>SOYAMA, N</creator><creator>SASAKI, G</creator><creator>YONEZAWA, T</creator><creator>OGI, K</creator><creator>SAMESHIMA, K</creator><creator>HOSHIBA, K</creator><creator>NAKAO, Y</creator><creator>KAMISAWA, A</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940901</creationdate><title>Surface morphology of lead-based thin films and their properties</title><author>ATSUKI, T ; SOYAMA, N ; SASAKI, G ; YONEZAWA, T ; OGI, K ; SAMESHIMA, K ; HOSHIBA, K ; NAKAO, Y ; KAMISAWA, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-382240e97c1dc5e77cdb7018e5cebd2b556491e7af29a5b2aaf11447d7d08b723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ATSUKI, T</creatorcontrib><creatorcontrib>SOYAMA, N</creatorcontrib><creatorcontrib>SASAKI, G</creatorcontrib><creatorcontrib>YONEZAWA, T</creatorcontrib><creatorcontrib>OGI, K</creatorcontrib><creatorcontrib>SAMESHIMA, K</creatorcontrib><creatorcontrib>HOSHIBA, K</creatorcontrib><creatorcontrib>NAKAO, Y</creatorcontrib><creatorcontrib>KAMISAWA, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ATSUKI, T</au><au>SOYAMA, N</au><au>SASAKI, G</au><au>YONEZAWA, T</au><au>OGI, K</au><au>SAMESHIMA, K</au><au>HOSHIBA, K</au><au>NAKAO, Y</au><au>KAMISAWA, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface morphology of lead-based thin films and their properties</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994-09-01</date><risdate>1994</risdate><volume>33</volume><issue>9B</issue><spage>5196</spage><epage>5200</epage><pages>5196-5200</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO
2
/Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.5196</doi><tpages>5</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1994-09, Vol.33 (9B), p.5196-5200 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Surface morphology of lead-based thin films and their properties |
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