Analysis of P and Sb diffusion during thermal oxidation in silicon
Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies ( I and V ). An extended relation of the local equilibrium between I and V , V I m = n , is derived...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1994, Vol.33 (6A), p.3362-3367 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3367 |
|---|---|
| container_issue | 6A |
| container_start_page | 3362 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 33 |
| creator | OKINO, T ONISHI, M |
| description | Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (
I
and
V
). An extended relation of the local equilibrium between
I
and
V
,
V
I
m
=
n
, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using
V
I
m
=
n
, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between
I
and
V
did not occur in the present diffusion time range. From the obtained results, diffusivities of
I
and
V
, i.e.,
D
I
=2.4×10
-9
cm
2
s
-1
and
D
V
=2.1×10
-10
cm
2
s
-1
, and also their thermal equilibrium concentrations,
C
I
0
=3.3×10
16
cm
-3
and
C
V
0
=2.2×10
17
cm
-3
, were determined at 1100°C. |
| doi_str_mv | 10.1143/jjap.33.3362 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_33_3362</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4217739</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-72eeb64dba2ae41e3bf25a314136d471abae3ae284115696e11705b686bb8a823</originalsourceid><addsrcrecordid>eNo9T11LwzAUDaJgnb75A_Lgo529uWnaPs7h1DFwoD6XmzbRlC4dyQbu37syEQ4cDucDDmO3kE0BJD50HW2niEcoccYSQFmkMlP5OUuyTEAqKyEu2VWM3VGqXELCHmee-kN0kQ-Wrzn5lr9r3jpr99ENnrf74PwX332bsKGeDz-upd1oOM-j610z-Gt2YamP5uaPJ-xz8fQxf0lXb8-v89kqbbDMd2khjNFKtpoEGQkGtRU5IUhA1coCSJNBMqKUALmqlAEoslyrUmldUilwwu5Pu00YYgzG1tvgNhQONWT1-L9eLmfrGrEe_x_jd6f4lmJDvQ3kGxf_O1JAUWCFv5U_WjA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of P and Sb diffusion during thermal oxidation in silicon</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>OKINO, T ; ONISHI, M</creator><creatorcontrib>OKINO, T ; ONISHI, M</creatorcontrib><description>Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (
I
and
V
). An extended relation of the local equilibrium between
I
and
V
,
V
I
m
=
n
, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using
V
I
m
=
n
, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between
I
and
V
did not occur in the present diffusion time range. From the obtained results, diffusivities of
I
and
V
, i.e.,
D
I
=2.4×10
-9
cm
2
s
-1
and
D
V
=2.1×10
-10
cm
2
s
-1
, and also their thermal equilibrium concentrations,
C
I
0
=3.3×10
16
cm
-3
and
C
V
0
=2.2×10
17
cm
-3
, were determined at 1100°C.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.33.3362</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Diffusion in solids ; Diffusion of other defects ; Exact sciences and technology ; Physics ; Theory of diffusion and ionic conduction in solids ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Japanese Journal of Applied Physics, 1994, Vol.33 (6A), p.3362-3367</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-72eeb64dba2ae41e3bf25a314136d471abae3ae284115696e11705b686bb8a823</citedby><cites>FETCH-LOGICAL-c385t-72eeb64dba2ae41e3bf25a314136d471abae3ae284115696e11705b686bb8a823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4217739$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OKINO, T</creatorcontrib><creatorcontrib>ONISHI, M</creatorcontrib><title>Analysis of P and Sb diffusion during thermal oxidation in silicon</title><title>Japanese Journal of Applied Physics</title><description>Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (
I
and
V
). An extended relation of the local equilibrium between
I
and
V
,
V
I
m
=
n
, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using
V
I
m
=
n
, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between
I
and
V
did not occur in the present diffusion time range. From the obtained results, diffusivities of
I
and
V
, i.e.,
D
I
=2.4×10
-9
cm
2
s
-1
and
D
V
=2.1×10
-10
cm
2
s
-1
, and also their thermal equilibrium concentrations,
C
I
0
=3.3×10
16
cm
-3
and
C
V
0
=2.2×10
17
cm
-3
, were determined at 1100°C.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion in solids</subject><subject>Diffusion of other defects</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Theory of diffusion and ionic conduction in solids</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNo9T11LwzAUDaJgnb75A_Lgo529uWnaPs7h1DFwoD6XmzbRlC4dyQbu37syEQ4cDucDDmO3kE0BJD50HW2niEcoccYSQFmkMlP5OUuyTEAqKyEu2VWM3VGqXELCHmee-kN0kQ-Wrzn5lr9r3jpr99ENnrf74PwX332bsKGeDz-upd1oOM-j610z-Gt2YamP5uaPJ-xz8fQxf0lXb8-v89kqbbDMd2khjNFKtpoEGQkGtRU5IUhA1coCSJNBMqKUALmqlAEoslyrUmldUilwwu5Pu00YYgzG1tvgNhQONWT1-L9eLmfrGrEe_x_jd6f4lmJDvQ3kGxf_O1JAUWCFv5U_WjA</recordid><startdate>1994</startdate><enddate>1994</enddate><creator>OKINO, T</creator><creator>ONISHI, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1994</creationdate><title>Analysis of P and Sb diffusion during thermal oxidation in silicon</title><author>OKINO, T ; ONISHI, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-72eeb64dba2ae41e3bf25a314136d471abae3ae284115696e11705b686bb8a823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion in solids</topic><topic>Diffusion of other defects</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Theory of diffusion and ionic conduction in solids</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OKINO, T</creatorcontrib><creatorcontrib>ONISHI, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OKINO, T</au><au>ONISHI, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of P and Sb diffusion during thermal oxidation in silicon</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994</date><risdate>1994</risdate><volume>33</volume><issue>6A</issue><spage>3362</spage><epage>3367</epage><pages>3362-3367</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Using experimental results of oxidation-enhanced/retarded diffusions (OED/ORD) for P/Sb in silicon, OED and ORD equations are rewritten into differential equations for self-interstitials and vacancies (
I
and
V
). An extended relation of the local equilibrium between
I
and
V
,
V
I
m
=
n
, is derived from asymptotic forms of formal solutions of OED and ORD equations. The differential equations are solved using
V
I
m
=
n
, i.e., OED and ORD equations are simultaneously solved without any assumptions. Consequently, OED/ORD were governed by only the interstitialcy/vacancy mechanism. The local equilibrium between
I
and
V
did not occur in the present diffusion time range. From the obtained results, diffusivities of
I
and
V
, i.e.,
D
I
=2.4×10
-9
cm
2
s
-1
and
D
V
=2.1×10
-10
cm
2
s
-1
, and also their thermal equilibrium concentrations,
C
I
0
=3.3×10
16
cm
-3
and
C
V
0
=2.2×10
17
cm
-3
, were determined at 1100°C.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.33.3362</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1994, Vol.33 (6A), p.3362-3367 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_33_3362 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of other defects Exact sciences and technology Physics Theory of diffusion and ionic conduction in solids Transport properties of condensed matter (nonelectronic) |
| title | Analysis of P and Sb diffusion during thermal oxidation in silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T23%3A03%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20P%20and%20Sb%20diffusion%20during%20thermal%20oxidation%20in%20silicon&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=OKINO,%20T&rft.date=1994&rft.volume=33&rft.issue=6A&rft.spage=3362&rft.epage=3367&rft.pages=3362-3367&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.33.3362&rft_dat=%3Cpascalfrancis_cross%3E4217739%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |