Effect of interfacial oxide on static and high-frequency performance in poly-emitter bipolar transistors under high-level injection

We report on a theoretical investigation of the effect of interfacial oxide on both static and dynamic performance in polycrystalline silicon emitter bipolar transistors. The calculation is carried out up to 0.9 V, before the onset of the Kirk effect. From the model, it is found that the current gai...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1994, Vol.33 (5A), p.2487-2493
Hauptverfasser:	YIH-FENG CHYAN, MING SZE, S, CHUN-YEN CHANG, REIF, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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