Low-pressure diamond nucleation and growth on Cu substrate
We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH 4 /H 2 plasma formed by electro...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1993-02, Vol.32 (2A), p.L200-L203 |
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| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | L203 |
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| container_issue | 2A |
| container_start_page | L200 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 32 |
| creator | OJIKA, S.-I YAMASHITA, S KATAOKA, K ISHIKURA, T YAMAGUCHI, A KAWARADA, H |
| description | We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH
4
/H
2
plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si. |
| doi_str_mv | 10.1143/jjap.32.l200 |
| format | Article |
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4
/H
2
plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.32.l200</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Japanese Journal of Applied Physics, 1993-02, Vol.32 (2A), p.L200-L203</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-ad9f6bac0210a52563a027bd7c6859274d8e43b1f7afc9a69bc360fe117810b43</citedby><cites>FETCH-LOGICAL-c357t-ad9f6bac0210a52563a027bd7c6859274d8e43b1f7afc9a69bc360fe117810b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4573607$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OJIKA, S.-I</creatorcontrib><creatorcontrib>YAMASHITA, S</creatorcontrib><creatorcontrib>KATAOKA, K</creatorcontrib><creatorcontrib>ISHIKURA, T</creatorcontrib><creatorcontrib>YAMAGUCHI, A</creatorcontrib><creatorcontrib>KAWARADA, H</creatorcontrib><title>Low-pressure diamond nucleation and growth on Cu substrate</title><title>Japanese Journal of Applied Physics</title><description>We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH
4
/H
2
plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9j01LxDAYhIMoWFdv_oAePJqa77TeluLXUtCDnsvbNNGWbluSlsV_b2TF0_DAzDCD0DUlGaWC3_U9zBln2cAIOUEJ5UJjQZQ8RQkhjGJRMHaOLkLoIyopaILuq-mAZ29DWL1N2w7209im42oGC0s3jSlE_PTTYflKI5VrGtYmLB4We4nOHAzBXv3pBn08PryXz7h6fXoptxU2XOoFQ1s41YCJAwhIJhUHwnTTaqNyWTAt2twK3lCnwZkCVNEYroizlOqckkbwDbo99ho_heCtq2ff7cF_15TUv7_r3W77VnNWV_F3tN8c7TMEA4PzMJou_GeE1LFe8x8OaVgU</recordid><startdate>19930201</startdate><enddate>19930201</enddate><creator>OJIKA, S.-I</creator><creator>YAMASHITA, S</creator><creator>KATAOKA, K</creator><creator>ISHIKURA, T</creator><creator>YAMAGUCHI, A</creator><creator>KAWARADA, H</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930201</creationdate><title>Low-pressure diamond nucleation and growth on Cu substrate</title><author>OJIKA, S.-I ; YAMASHITA, S ; KATAOKA, K ; ISHIKURA, T ; YAMAGUCHI, A ; KAWARADA, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-ad9f6bac0210a52563a027bd7c6859274d8e43b1f7afc9a69bc360fe117810b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OJIKA, S.-I</creatorcontrib><creatorcontrib>YAMASHITA, S</creatorcontrib><creatorcontrib>KATAOKA, K</creatorcontrib><creatorcontrib>ISHIKURA, T</creatorcontrib><creatorcontrib>YAMAGUCHI, A</creatorcontrib><creatorcontrib>KAWARADA, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OJIKA, S.-I</au><au>YAMASHITA, S</au><au>KATAOKA, K</au><au>ISHIKURA, T</au><au>YAMAGUCHI, A</au><au>KAWARADA, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-pressure diamond nucleation and growth on Cu substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1993-02-01</date><risdate>1993</risdate><volume>32</volume><issue>2A</issue><spage>L200</spage><epage>L203</epage><pages>L200-L203</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>We present a new technique for providing nuclei for diamond formation on nondiamond substrates and its application to the growth of diamond on a Cu substrate by chemical vapor deposition (CVD). This is a predeposition process in which the substrate is immersed in a CH
4
/H
2
plasma formed by electron cyclotron resonance at a low pressure (0.1 Torr). The technique provides possibilities of nucleation over an increased area at temperatures lower (about 500°C) than usual, as well as improved process controllability. The grown diamonds on Cu exhibit a morphology significantly different from that of diamonds grown on Si.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.32.l200</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1993-02, Vol.32 (2A), p.L200-L203 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_32_L200 |
| source | Institute of Physics Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Low-pressure diamond nucleation and growth on Cu substrate |
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