Silicon field emitter capable of low voltage emission

A silicon field emitter of a very low voltage emission type has been obtained. In this emitter, a thermal SiO 2 film was used as an insulator which separates the gate electrode from the cathode substrate. It is easy to decrease the distance between the gate electrode and the emitter by thermal oxida...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-12, Vol.32 (12B), p.6293-6296
Hauptverfasser:	URAYAMA, M, ISE, T, MARUO, Y, KISHI, A, IMAMOTO, R, TAKASE, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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