High-performance poly-Si thin-film transistors with excimer-laser annealed silicon-nitride gate

We report, for the first time, that ArF excimer laser annealing can improve silicon-nitride film properties. It is shown that the 15-nm-thick top region of the laser preannealed film had a lower hydrogen content and a much lower etching rate than the as-deposited film. The laser preannealed film is...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.452-457
Hauptverfasser:	SHIMIZU, K, NAKAMURA, K, HIGASHIMOTO, M, SUGUIRA, O, MATSUMURA, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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