Dislocations and tungsten concentration profiles in tungsten-silicon contact areas

Dislocation formation and impurity distributions in metal-silicon contact areas were investigated by means of cross-sectional transmission electron microscopy (TEM) images and energy-dispersive X-ray measurement. Dislocations were formed in the (111) plane in the [110] direction by annealing at 700°...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-08, Vol.32 (8), p.3335-3337
Hauptverfasser:	AOYAMA, T, KOIKE, Y, SUZUKI, M, MISAWA, Y, SUZUKI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition defects and impurities Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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