Diffusion of point defects in silicon crystals during melt-growth. III: Two diffusor model

In this paper, the phenomenological diffusion equations which describe the diffusion of point defects in silicon single crystals during melt-growth and include the effect of the annihilation reaction between self interstitials and vacancies are developed. The macroscopic structure of the OSF-ring in...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-04, Vol.32 (4), p.1754-1758
Hauptverfasser:	HABU, R, KOJIMA, K, HARADA, H, TOMIURA, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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