Stable operation of AlGaAs/GaAs light-emitting diodes fabricated on Si substrate
An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400°C is reduced to less than 1×10 8 dyn/cm 2 . The output power from the UCGA...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1992-02, Vol.31 (2A), p.L78-L81 |
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| container_end_page | L81 |
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| container_issue | 2A |
| container_start_page | L78 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 31 |
| creator | WADA, N YOSHIMI, S SAKAI, S SHAO, C. L FUKUI, M |
| description | An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400°C is reduced to less than 1×10
8
dyn/cm
2
. The output power from the UCGAS LED under a constant current of 800 A/cm
2
degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10
9
dyn/cm
2
degrades quickly. |
| doi_str_mv | 10.1143/jjap.31.l78 |
| format | Article |
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8
dyn/cm
2
. The output power from the UCGAS LED under a constant current of 800 A/cm
2
degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10
9
dyn/cm
2
degrades quickly.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.31.l78</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1992-02, Vol.31 (2A), p.L78-L81</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-66b8b5fe6fb6c1eb5cf7096340c51f1adcac300c1e98e2a135c6016ae33f137c3</citedby><cites>FETCH-LOGICAL-c355t-66b8b5fe6fb6c1eb5cf7096340c51f1adcac300c1e98e2a135c6016ae33f137c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5119088$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WADA, N</creatorcontrib><creatorcontrib>YOSHIMI, S</creatorcontrib><creatorcontrib>SAKAI, S</creatorcontrib><creatorcontrib>SHAO, C. L</creatorcontrib><creatorcontrib>FUKUI, M</creatorcontrib><title>Stable operation of AlGaAs/GaAs light-emitting diodes fabricated on Si substrate</title><title>Japanese Journal of Applied Physics</title><description>An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400°C is reduced to less than 1×10
8
dyn/cm
2
. The output power from the UCGAS LED under a constant current of 800 A/cm
2
degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10
9
dyn/cm
2
degrades quickly.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9UE9LwzAcDaJgnZ78Ajl4k275NU3aHsvQ6Rg4mJ7LL2kyU7q1JPHgt7djw8t7PN6fwyPkEdgcIOeLrsNxzmHeF-UVSYDnRZozKa5JwlgGaV5l2S25C6GbpBQ5JGS7i6h6Q4fReIxuONLB0rpfYR0WJ6C923_H1BxcjO64p60bWhOoReWdxmhaOlV2joYfFeK0YO7JjcU-mIcLz8jX68vn8i3dfKzel_Um1VyImEqpSiWskVZJDUYJbQtWSZ4zLcACtho1Z2yyqtJkCFxoyUCi4dwCLzSfkefzrvZDCN7YZvTugP63AdaczmjW63rbcGg2RTmln87pEYPG3no8ahf-KwKgYmXJ_wBQNV-q</recordid><startdate>19920201</startdate><enddate>19920201</enddate><creator>WADA, N</creator><creator>YOSHIMI, S</creator><creator>SAKAI, S</creator><creator>SHAO, C. L</creator><creator>FUKUI, M</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920201</creationdate><title>Stable operation of AlGaAs/GaAs light-emitting diodes fabricated on Si substrate</title><author>WADA, N ; YOSHIMI, S ; SAKAI, S ; SHAO, C. L ; FUKUI, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-66b8b5fe6fb6c1eb5cf7096340c51f1adcac300c1e98e2a135c6016ae33f137c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WADA, N</creatorcontrib><creatorcontrib>YOSHIMI, S</creatorcontrib><creatorcontrib>SAKAI, S</creatorcontrib><creatorcontrib>SHAO, C. L</creatorcontrib><creatorcontrib>FUKUI, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WADA, N</au><au>YOSHIMI, S</au><au>SAKAI, S</au><au>SHAO, C. L</au><au>FUKUI, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stable operation of AlGaAs/GaAs light-emitting diodes fabricated on Si substrate</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1992-02-01</date><risdate>1992</risdate><volume>31</volume><issue>2A</issue><spage>L78</spage><epage>L81</epage><pages>L78-L81</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400°C is reduced to less than 1×10
8
dyn/cm
2
. The output power from the UCGAS LED under a constant current of 800 A/cm
2
degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10
9
dyn/cm
2
degrades quickly.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.31.l78</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1992-02, Vol.31 (2A), p.L78-L81 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_31_L78 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Stable operation of AlGaAs/GaAs light-emitting diodes fabricated on Si substrate |
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