Fabrication and characteristics of schottky gated field effect transistors utilizing poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene)

Fabrication and characteristics of Schottky gated poly(1,4-naphthalene vinylene) and poly(p-phenylene vinylene) field-effect transistors (FETs) have been reported for the first time. The FET has been realized utilizing the polymer film formed on a Schottky gated electrode deposited upon a glass subs...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1992-05, Vol.31 (5B), p.L646-L648
Hauptverfasser:	OHMORI, Y, MURO, K, ONODA, M, YOSHINO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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