Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (O F ) and rapid thermal oxide (O R ) as starting oxides are investigated. It is found that the RNO structure which uses O F as a starting oxide and with nitridation carried out a...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1992-05, Vol.31 (5B), p.L600-L603, Article L600 |
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| container_end_page | L603 |
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| container_issue | 5B |
| container_start_page | L600 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 31 |
| creator | KUEI-SHU CHANG-LIAO JENN-GWO HWU |
| description | The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (O
F
) and rapid thermal oxide (O
R
) as starting oxides are investigated. It is found that the RNO structure which uses O
F
as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure O
R
as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed. |
| doi_str_mv | 10.1143/JJAP.31.L600 |
| format | Article |
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F
) and rapid thermal oxide (O
R
) as starting oxides are investigated. It is found that the RNO structure which uses O
F
as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure O
R
as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.31.L600</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Japanese Journal of Applied Physics, 1992-05, Vol.31 (5B), p.L600-L603, Article L600</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-3f4ff577a04df69affc204c9b30979f370ef928f456105a4a3532af4055850af3</citedby><cites>FETCH-LOGICAL-c357t-3f4ff577a04df69affc204c9b30979f370ef928f456105a4a3532af4055850af3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5424794$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KUEI-SHU</creatorcontrib><creatorcontrib>CHANG-LIAO</creatorcontrib><creatorcontrib>JENN-GWO HWU</creatorcontrib><title>Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes</title><title>Japanese Journal of Applied Physics</title><description>The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (O
F
) and rapid thermal oxide (O
R
) as starting oxides are investigated. It is found that the RNO structure which uses O
F
as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure O
R
as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNptkM9OAjEQhxujiYjefIAePLrYbttd9kgQ_wWFAJ43Q7cjNcsuaatRX8MXtojxYDzNTOabb5IfIaec9TiX4uLubjDtCd4bZ4ztkQ4XMk8ky9Q-6TCW8kQWaXpIjrx_jmOmJO-QzxGi0YG2SOcBXLDNE5282crQtqGjOq6c1VDT4Qoc6GCc9cFqv-XvTYA6mZk24vbDVPTBRriKzbcgmZu11W1TvejQOnppXq02nk6d2YCL0PKdzmBjK7pYGbeOL6aujYA3_pgcINTenPzULnm8Gi2GN8l4cn07HIwTLVQeEoESUeU5MFlhVgCiTpnUxVKwIi9Q5MxgkfZRqowzBRKEEimgZEr1FQMUXXK-82rXeu8Mlhtn1-DeS87KbaDlNtBS8HIbaMTPdvgGfIwEHTTa-t8bJVOZFzJi6R-rtgGCbZvgwNb_u78ASjCInA</recordid><startdate>19920501</startdate><enddate>19920501</enddate><creator>KUEI-SHU</creator><creator>CHANG-LIAO</creator><creator>JENN-GWO HWU</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920501</creationdate><title>Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes</title><author>KUEI-SHU ; CHANG-LIAO ; JENN-GWO HWU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-3f4ff577a04df69affc204c9b30979f370ef928f456105a4a3532af4055850af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KUEI-SHU</creatorcontrib><creatorcontrib>CHANG-LIAO</creatorcontrib><creatorcontrib>JENN-GWO HWU</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KUEI-SHU</au><au>CHANG-LIAO</au><au>JENN-GWO HWU</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1992-05-01</date><risdate>1992</risdate><volume>31</volume><issue>5B</issue><spage>L600</spage><epage>L603</epage><pages>L600-L603</pages><artnum>L600</artnum><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (O
F
) and rapid thermal oxide (O
R
) as starting oxides are investigated. It is found that the RNO structure which uses O
F
as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure O
R
as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.31.L600</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1992-05, Vol.31 (5B), p.L600-L603, Article L600 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_31_L600 |
| source | Institute of Physics Journals |
| subjects | Applied sciences Compound structure devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Effect of Starting Oxide on Electrical Characteristics of Metal-Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes |
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