Formation of Ridges on Gd 3 Ga 5 O 12 by Ion-Beam Etching and Subsequent Phosphoric Acid Treatment Utilizing Tri-Layered Etching Mask

This paper investigates the shapes of straight ridges about 4 µm high, that are formed on [1 1 1], [1 0 0] and [1 1 0] oriented Gd 3 Ga 5 O 12 (GGG) single crystal substrates by utilizing a Ta/organic layer/Si 3 N 4 tri-layered etching mask. Following argon ion-beam etching, the substrates are soake...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1992-12, Vol.31 (12R), p.3888
Hauptverfasser:	Katoh, Yujiro, Naoto Sugimoto, Naoto Sugimoto, Atsushi Shibukawa, Atsushi Shibukawa
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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