Selective surface doping method of P atoms in lateral solid phase epitaxy and its applications to device fabrication

Growth characteristics and device application of the selective surface doping method in lateral solid phase epitaxy (L-SPE) are presented. In this method, P atoms are incorporated near the surface of amorphous Si (a-Si) films to enhance the L-SPE growth and the underlying undoped layers are used for...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 1992-06, Vol.31 (6A), p.1695-1701
Hauptverfasser:	ISHIWARA, H, DAN, T, FUKAO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!