Correlations between self-interstitials and vacancies during thermal oxidation in silicon

It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathe...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991-05, Vol.30 (5A), p.L857-L859
1. Verfasser:	OKINO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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