Correlations between self-interstitials and vacancies during thermal oxidation in silicon
It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathe...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1991-05, Vol.30 (5A), p.L857-L859 |
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| container_end_page | L859 |
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| container_issue | 5A |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 30 |
| creator | OKINO, T |
| description | It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathematical point of view on these relations, a method for their analysis was established. The results of this study clearly indicate some OED, ORD and OSF to be governed by only an interstitialcy or vacancy mechanism. A method for obtaining analytical solutions is also discussed. |
| doi_str_mv | 10.1143/jjap.30.l857 |
| format | Article |
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From a mathematical point of view on these relations, a method for their analysis was established. The results of this study clearly indicate some OED, ORD and OSF to be governed by only an interstitialcy or vacancy mechanism. A method for obtaining analytical solutions is also discussed.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.30.l857</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Exact sciences and technology ; Physics ; Point defects (vacancies, interstitials, color centers, etc.) and defect clusters ; Structure of solids and liquids; crystallography</subject><ispartof>Japanese Journal of Applied Physics, 1991-05, Vol.30 (5A), p.L857-L859</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-ee1fb2623a5131ac29fc2a1b02cfe95709918d221068239f040a42ded6fff2a73</citedby><cites>FETCH-LOGICAL-c357t-ee1fb2623a5131ac29fc2a1b02cfe95709918d221068239f040a42ded6fff2a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5001548$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OKINO, T</creatorcontrib><title>Correlations between self-interstitials and vacancies during thermal oxidation in silicon</title><title>Japanese Journal of Applied Physics</title><description>It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathematical point of view on these relations, a method for their analysis was established. The results of this study clearly indicate some OED, ORD and OSF to be governed by only an interstitialcy or vacancy mechanism. A method for obtaining analytical solutions is also discussed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kMtLAzEYxIMoWKs3_4AcPLrrl9c-jqX4KgU96MHT8jWbaEqaLUl8_fdurXgaBuY3MEPIOYOSMSmu1mvclgJK36j6gEyYkHUhoVKHZALAWSFbzo_JSUrr0VZKsgl5mQ8xGo_ZDSHRlcmfxgSajLeFC9nElF126BPF0NMP1Bi0M4n279GFV5rfTNygp8OX638rqBth550ewik5siNozv50Sp5vrp_md8Xy4fZ-PlsWWqg6F8Ywu-IVF6iYYKh5azVHtgKurWlVDW3Lmp5zBlXDRWtBAkrem76y1nKsxZRc7nt1HFKKxnbb6DYYvzsG3e6WbrGYPXYCuuV4yxi_2Me3mDR6G3eL0j-jAJiSjfgBSkpkjA</recordid><startdate>19910501</startdate><enddate>19910501</enddate><creator>OKINO, T</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19910501</creationdate><title>Correlations between self-interstitials and vacancies during thermal oxidation in silicon</title><author>OKINO, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-ee1fb2623a5131ac29fc2a1b02cfe95709918d221068239f040a42ded6fff2a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OKINO, T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OKINO, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlations between self-interstitials and vacancies during thermal oxidation in silicon</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991-05-01</date><risdate>1991</risdate><volume>30</volume><issue>5A</issue><spage>L857</spage><epage>L859</epage><pages>L857-L859</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathematical point of view on these relations, a method for their analysis was established. The results of this study clearly indicate some OED, ORD and OSF to be governed by only an interstitialcy or vacancy mechanism. A method for obtaining analytical solutions is also discussed.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.30.l857</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991-05, Vol.30 (5A), p.L857-L859 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_30_L857 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Structure of solids and liquids crystallography |
| title | Correlations between self-interstitials and vacancies during thermal oxidation in silicon |
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