Correlations between self-interstitials and vacancies during thermal oxidation in silicon

It is generally accepted that there are four relations between self-interstitials and vacancies during thermal oxidation in silicon; local equilibrium between self-interstitials and vacancies, oxidation-enhanced and -retarded diffusions (OED and ORD) and oxidation stacking faults (OSF). From a mathematical point of view on these relations, a method for their analysis was established. The results of this study clearly indicate some OED, ORD and OSF to be governed by only an interstitialcy or vacancy mechanism. A method for obtaining analytical solutions is also discussed.