Surfactant epitaxy of Si on Si(111) mediated by Sn
Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃330°C. The Si atoms deposited on the Sn layer diffuse...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1991-11, Vol.30 (11B), p.L1978-L1981 |
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| container_end_page | L1981 |
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| container_issue | 11B |
| container_start_page | L1978 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 30 |
| creator | IWANARI, S TAKAYANAGI, K |
| description | Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃330°C. The Si atoms deposited on the Sn layer diffuse underneath the Sn layer to be incorporated with the bulk Si layer, so that the Sn layer is always located at the outermost surface to maintain the step flow as well. The growths with and without the Sn layer are studied comparatively to find an approximate relation, λ
c
2
∼
A
exp (-
E
/
k
T
c
), between the critical step distance for the step flow, λ
c
, and the substrate temperature,
T
c
. The step flow for the Si/Sn/Si occurs at much lower temperature and at much longer step distance than for the Si/Si: at 330°C, λ
c
≃1240 nm for Si/Sn/Si, and λ
c
≃175 nm for Si/Si. |
| doi_str_mv | 10.1143/jjap.30.l1978 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_30_L1978</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5184174</sourcerecordid><originalsourceid>FETCH-LOGICAL-c403t-35f37972300979761c95ca9e0fd4f18612f416c5ca2c1dffb7a137240ad29dea3</originalsourceid><addsrcrecordid>eNo9T0tLxDAYDKJgXT16z8GDHlrzJWnTHJfF11JQqJ7Dt3lAS7dbmgr239tlxcsMM8wMDCG3wDIAKR7bFodMsKwDrcozkoCQKpWsyM9JwhiHVGrOL8lVjO0ii1xCQnj9PQa0E_YT9UMz4c9MD4HWDT30C94DwAPde9fg5B3dzbTur8lFwC76mz9eka_np8_Na1q9v7xt1lVqJRNTKvIglFZcMKYXLsDq3KL2LDgZoCyABwmFXTxuwYWwUwhCccnQce08ihVJT7t2PMQ4-mCGsdnjOBtg5njYbLfrDyOYqY6Hl_zdKT9gtNiFEXvbxP9SDqUEJcUvl1dTaw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Surfactant epitaxy of Si on Si(111) mediated by Sn</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>IWANARI, S ; TAKAYANAGI, K</creator><creatorcontrib>IWANARI, S ; TAKAYANAGI, K</creatorcontrib><description>Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃330°C. The Si atoms deposited on the Sn layer diffuse underneath the Sn layer to be incorporated with the bulk Si layer, so that the Sn layer is always located at the outermost surface to maintain the step flow as well. The growths with and without the Sn layer are studied comparatively to find an approximate relation, λ
c
2
∼
A
exp (-
E
/
k
T
c
), between the critical step distance for the step flow, λ
c
, and the substrate temperature,
T
c
. The step flow for the Si/Sn/Si occurs at much lower temperature and at much longer step distance than for the Si/Si: at 330°C, λ
c
≃1240 nm for Si/Sn/Si, and λ
c
≃175 nm for Si/Si.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.30.l1978</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Japanese Journal of Applied Physics, 1991-11, Vol.30 (11B), p.L1978-L1981</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-35f37972300979761c95ca9e0fd4f18612f416c5ca2c1dffb7a137240ad29dea3</citedby><cites>FETCH-LOGICAL-c403t-35f37972300979761c95ca9e0fd4f18612f416c5ca2c1dffb7a137240ad29dea3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5184174$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>IWANARI, S</creatorcontrib><creatorcontrib>TAKAYANAGI, K</creatorcontrib><title>Surfactant epitaxy of Si on Si(111) mediated by Sn</title><title>Japanese Journal of Applied Physics</title><description>Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃330°C. The Si atoms deposited on the Sn layer diffuse underneath the Sn layer to be incorporated with the bulk Si layer, so that the Sn layer is always located at the outermost surface to maintain the step flow as well. The growths with and without the Sn layer are studied comparatively to find an approximate relation, λ
c
2
∼
A
exp (-
E
/
k
T
c
), between the critical step distance for the step flow, λ
c
, and the substrate temperature,
T
c
. The step flow for the Si/Sn/Si occurs at much lower temperature and at much longer step distance than for the Si/Si: at 330°C, λ
c
≃1240 nm for Si/Sn/Si, and λ
c
≃175 nm for Si/Si.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9T0tLxDAYDKJgXT16z8GDHlrzJWnTHJfF11JQqJ7Dt3lAS7dbmgr239tlxcsMM8wMDCG3wDIAKR7bFodMsKwDrcozkoCQKpWsyM9JwhiHVGrOL8lVjO0ii1xCQnj9PQa0E_YT9UMz4c9MD4HWDT30C94DwAPde9fg5B3dzbTur8lFwC76mz9eka_np8_Na1q9v7xt1lVqJRNTKvIglFZcMKYXLsDq3KL2LDgZoCyABwmFXTxuwYWwUwhCccnQce08ihVJT7t2PMQ4-mCGsdnjOBtg5njYbLfrDyOYqY6Hl_zdKT9gtNiFEXvbxP9SDqUEJcUvl1dTaw</recordid><startdate>19911101</startdate><enddate>19911101</enddate><creator>IWANARI, S</creator><creator>TAKAYANAGI, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19911101</creationdate><title>Surfactant epitaxy of Si on Si(111) mediated by Sn</title><author>IWANARI, S ; TAKAYANAGI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-35f37972300979761c95ca9e0fd4f18612f416c5ca2c1dffb7a137240ad29dea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>IWANARI, S</creatorcontrib><creatorcontrib>TAKAYANAGI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>IWANARI, S</au><au>TAKAYANAGI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surfactant epitaxy of Si on Si(111) mediated by Sn</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991-11-01</date><risdate>1991</risdate><volume>30</volume><issue>11B</issue><spage>L1978</spage><epage>L1981</epage><pages>L1978-L1981</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Surfactant epitaxy is studied by high-resolution reflection electron microscopy for the growth of Si on a Si(111) surface covered by a tin (Sn) layer. The growths on stepped surfaces occur chiefly by the step flow at substrate temperatures above ≃330°C. The Si atoms deposited on the Sn layer diffuse underneath the Sn layer to be incorporated with the bulk Si layer, so that the Sn layer is always located at the outermost surface to maintain the step flow as well. The growths with and without the Sn layer are studied comparatively to find an approximate relation, λ
c
2
∼
A
exp (-
E
/
k
T
c
), between the critical step distance for the step flow, λ
c
, and the substrate temperature,
T
c
. The step flow for the Si/Sn/Si occurs at much lower temperature and at much longer step distance than for the Si/Si: at 330°C, λ
c
≃1240 nm for Si/Sn/Si, and λ
c
≃175 nm for Si/Si.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.30.l1978</doi></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991-11, Vol.30 (11B), p.L1978-L1981 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Surfactant epitaxy of Si on Si(111) mediated by Sn |
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