Amorphous silicon-carbon alloy prepared by the CMP (controlled plasma magnetron) method
Hydrogenated amorphous silicon-carbon (a-SiC) films were fabricated using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. The films obtained had a large Si-C bond density and a low Si-H bond density. The absorption coefficient at the photon energy level of 2.5 to 3.5...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1991, Vol.30 (1), p.7-12 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 30 |
| creator | NISHIKUNI, M NINOMIYA, K OKAMOTO, S TAKAHAMA, T TSUDA, S OHNISHI, M NAKANO, S KUWANO, Y |
| description | Hydrogenated amorphous silicon-carbon (a-SiC) films were fabricated using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. The films obtained had a large Si-C bond density and a low Si-H bond density. The absorption coefficient at the photon energy level of 2.5 to 3.5 eV for these films was one order of magnitude lower than that for conventional a-SiC films. Furthermore, the dark conductivity of boron-doped films increased to more than 10
-4
(Ω·cm)
-1
, which is the highest value achieved for a-SiC with a carbon content of 55%. |
| doi_str_mv | 10.1143/jjap.30.7 |
| format | Article |
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-4
(Ω·cm)
-1
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-4
(Ω·cm)
-1
, which is the highest value achieved for a-SiC with a carbon content of 55%.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Infrared and raman spectra and scattering</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpFkEtLAzEUhYMoWKsL_0E2gi6m5jFpJ8tSfJWKXSguhzuZGzslMwnJuOi_N1JBzuJyDt-5i0PINWczzkt5v99DmEk2W5yQCZfloijZXJ2SCWOCF6UW4pxcpLTPdq5KPiGfy97HsPPfiabOdcYPhYHY-IGCc_5AQ8QAEVvaHOi4Q7p63dLbTI3RO5fj4CD1QHv4GjBnwx3tcdz59pKcWXAJr_7ulHw8PryvnovN29PLarkpjFRiLBTXWSgtclRGQcNEKzk0jWlxrm1lLKJG0balVUKhtRVjFTcCS56r2sgpuTv-NdGnFNHWIXY9xEPNWf27SL1eL7e1ZPUiszdHNkAy4GyEwXTpv6CV5LpS8gfeYWI6</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>NISHIKUNI, M</creator><creator>NINOMIYA, K</creator><creator>OKAMOTO, S</creator><creator>TAKAHAMA, T</creator><creator>TSUDA, S</creator><creator>OHNISHI, M</creator><creator>NAKANO, S</creator><creator>KUWANO, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1991</creationdate><title>Amorphous silicon-carbon alloy prepared by the CMP (controlled plasma magnetron) method</title><author>NISHIKUNI, M ; NINOMIYA, K ; OKAMOTO, S ; TAKAHAMA, T ; TSUDA, S ; OHNISHI, M ; NAKANO, S ; KUWANO, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-519191e3fe1e5c5ab02d31abbcde69f8cfee9e2dd4f525eff80081c2e415199c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Infrared and raman spectra and scattering</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NISHIKUNI, M</creatorcontrib><creatorcontrib>NINOMIYA, K</creatorcontrib><creatorcontrib>OKAMOTO, S</creatorcontrib><creatorcontrib>TAKAHAMA, T</creatorcontrib><creatorcontrib>TSUDA, S</creatorcontrib><creatorcontrib>OHNISHI, M</creatorcontrib><creatorcontrib>NAKANO, S</creatorcontrib><creatorcontrib>KUWANO, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NISHIKUNI, M</au><au>NINOMIYA, K</au><au>OKAMOTO, S</au><au>TAKAHAMA, T</au><au>TSUDA, S</au><au>OHNISHI, M</au><au>NAKANO, S</au><au>KUWANO, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous silicon-carbon alloy prepared by the CMP (controlled plasma magnetron) method</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991</date><risdate>1991</risdate><volume>30</volume><issue>1</issue><spage>7</spage><epage>12</epage><pages>7-12</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Hydrogenated amorphous silicon-carbon (a-SiC) films were fabricated using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. The films obtained had a large Si-C bond density and a low Si-H bond density. The absorption coefficient at the photon energy level of 2.5 to 3.5 eV for these films was one order of magnitude lower than that for conventional a-SiC films. Furthermore, the dark conductivity of boron-doped films increased to more than 10
-4
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-1
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| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991, Vol.30 (1), p.7-12 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_30_7 |
| source | Institute of Physics Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics |
| title | Amorphous silicon-carbon alloy prepared by the CMP (controlled plasma magnetron) method |
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