Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors
We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al 0.5 Ga 0.5 )Sb/InAs/(Al 0.5 Ga 0.5 )Sb/GaSb/(Al 0.5 Ga 0.5 )Sb double quantum well heterostructure grown by molecular beam...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1991-12, Vol.30 (12S), p.3833 |
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| Sprache: | eng |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Yoh, Kanji Taniguchi, Hiroaki Kazumasa Kiyomi, Kazumasa Kiyomi Masataka Inoue, Masataka Inoue |
| description | We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al
0.5
Ga
0.5
)Sb/InAs/(Al
0.5
Ga
0.5
)Sb/GaSb/(Al
0.5
Ga
0.5
)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 µm-gate-length GaSb p-channel HFET and 1.2 µm-gate-length InAs n-channel HFETs showed decent
I-V
characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively. |
| doi_str_mv | 10.1143/JJAP.30.3833 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_30_3833</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_30_3833</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-8f5f46fdc6757c39f71bb1867095b350eb8883729c5f937d0ada19b6860aa0823</originalsourceid><addsrcrecordid>eNo9kMtKxDAYhYMoWEd3PkAewIx_mubSZSlzZUDFEZclTRPs0KZDkln49s6guDqcs_jgfAg9UphTWrDn7bZ6nTOYM8XYFcooKyQpQPBrlAHklBRlnt-iuxgP5yp4QTPU1dN4HOxofdLhG298FbEn9Zf23g5Y-w6v9HuLj__T20n7dBrxpx0GvLbJhulw8ib1k8fL3g4dWThnTcL7oH3sY5pCvEc3Tg_RPvzlDH0sF_t6TXYvq01d7YjJBSSiHHeFcJ0RkkvDSidp21IlJJS8ZRxsq5RiMi8NdyWTHehO07IVSoDWoHI2Q0-_XBOmGIN1zTH04_lXQ6G5GGouhhoGzcUQ-wHjblko</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Yoh, Kanji ; Taniguchi, Hiroaki ; Kazumasa Kiyomi, Kazumasa Kiyomi ; Masataka Inoue, Masataka Inoue</creator><creatorcontrib>Yoh, Kanji ; Taniguchi, Hiroaki ; Kazumasa Kiyomi, Kazumasa Kiyomi ; Masataka Inoue, Masataka Inoue</creatorcontrib><description>We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al
0.5
Ga
0.5
)Sb/InAs/(Al
0.5
Ga
0.5
)Sb/GaSb/(Al
0.5
Ga
0.5
)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 µm-gate-length GaSb p-channel HFET and 1.2 µm-gate-length InAs n-channel HFETs showed decent
I-V
characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.30.3833</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1991-12, Vol.30 (12S), p.3833</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-8f5f46fdc6757c39f71bb1867095b350eb8883729c5f937d0ada19b6860aa0823</citedby><cites>FETCH-LOGICAL-c260t-8f5f46fdc6757c39f71bb1867095b350eb8883729c5f937d0ada19b6860aa0823</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yoh, Kanji</creatorcontrib><creatorcontrib>Taniguchi, Hiroaki</creatorcontrib><creatorcontrib>Kazumasa Kiyomi, Kazumasa Kiyomi</creatorcontrib><creatorcontrib>Masataka Inoue, Masataka Inoue</creatorcontrib><title>Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors</title><title>Japanese Journal of Applied Physics</title><description>We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al
0.5
Ga
0.5
)Sb/InAs/(Al
0.5
Ga
0.5
)Sb/GaSb/(Al
0.5
Ga
0.5
)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 µm-gate-length GaSb p-channel HFET and 1.2 µm-gate-length InAs n-channel HFETs showed decent
I-V
characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKxDAYhYMoWEd3PkAewIx_mubSZSlzZUDFEZclTRPs0KZDkln49s6guDqcs_jgfAg9UphTWrDn7bZ6nTOYM8XYFcooKyQpQPBrlAHklBRlnt-iuxgP5yp4QTPU1dN4HOxofdLhG298FbEn9Zf23g5Y-w6v9HuLj__T20n7dBrxpx0GvLbJhulw8ib1k8fL3g4dWThnTcL7oH3sY5pCvEc3Tg_RPvzlDH0sF_t6TXYvq01d7YjJBSSiHHeFcJ0RkkvDSidp21IlJJS8ZRxsq5RiMi8NdyWTHehO07IVSoDWoHI2Q0-_XBOmGIN1zTH04_lXQ6G5GGouhhoGzcUQ-wHjblko</recordid><startdate>19911201</startdate><enddate>19911201</enddate><creator>Yoh, Kanji</creator><creator>Taniguchi, Hiroaki</creator><creator>Kazumasa Kiyomi, Kazumasa Kiyomi</creator><creator>Masataka Inoue, Masataka Inoue</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19911201</creationdate><title>Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors</title><author>Yoh, Kanji ; Taniguchi, Hiroaki ; Kazumasa Kiyomi, Kazumasa Kiyomi ; Masataka Inoue, Masataka Inoue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-8f5f46fdc6757c39f71bb1867095b350eb8883729c5f937d0ada19b6860aa0823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoh, Kanji</creatorcontrib><creatorcontrib>Taniguchi, Hiroaki</creatorcontrib><creatorcontrib>Kazumasa Kiyomi, Kazumasa Kiyomi</creatorcontrib><creatorcontrib>Masataka Inoue, Masataka Inoue</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoh, Kanji</au><au>Taniguchi, Hiroaki</au><au>Kazumasa Kiyomi, Kazumasa Kiyomi</au><au>Masataka Inoue, Masataka Inoue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991-12-01</date><risdate>1991</risdate><volume>30</volume><issue>12S</issue><spage>3833</spage><pages>3833-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al
0.5
Ga
0.5
)Sb/InAs/(Al
0.5
Ga
0.5
)Sb/GaSb/(Al
0.5
Ga
0.5
)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 µm-gate-length GaSb p-channel HFET and 1.2 µm-gate-length InAs n-channel HFETs showed decent
I-V
characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.</abstract><doi>10.1143/JJAP.30.3833</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991-12, Vol.30 (12S), p.3833 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_30_3833 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Complementary InAs n-Channel and GaSb p-Channel Quantum Well Heterojunction Field-Effect Transistors |
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