Precise reactive ion etching of Ta absorber on X-ray masks

We investigated the reactive ion etching (RIE) of the Ta absorber on X-ray masks using a mixture of chlorine (Cl 2 ) and chloroform (CHCl 3 ) gases. To improve the pattern profiles, we used a gas mixture of chlorine (Cl 2 ) and chloroform (CHCl 3 ) which enhances deposition and protects side wall. W...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991-11, Vol.30 (11B), p.3065-3069
Hauptverfasser:	NAKAISHI, M, SUGISHIMA, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology
Online-Zugang:	Volltext
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