Topography of the Ar+-sputtered Si surface

The topography of Si surfaces after 30 keV Ar + bombardment at oblique incidence is studied with and without seeding of high-melting-point W atoms. In both cases, the sputtered Si surfaces exhibit intense corrugated terrace morphology, the dimension of which increases with increasing ion dose. Also,...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991-11, Vol.30 (11A), p.2895-2896
Hauptverfasser:	Chini, Tapas Kumar, Bhattacharyya, Satya Ranjan, Debabrata Ghose, Debabrata Ghose, Debashis Basu, Debashis Basu
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Ion radiation effects Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography
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Zusammenfassung:	The topography of Si surfaces after 30 keV Ar + bombardment at oblique incidence is studied with and without seeding of high-melting-point W atoms. In both cases, the sputtered Si surfaces exhibit intense corrugated terrace morphology, the dimension of which increases with increasing ion dose. Also, a few cones characteristics for oblique ion incidence are formed and the seed material seems to have no influence on their development.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.30.2895