Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting
The thermal diffusivity of Si was measured by a laser flash method up to 1723 K. SiC and fused quartz cells were prepared for the measurement on the melt. The thermal conductivities of the crystal and the melt at the melting point were determined to be 27.3±0.3 and 56±1 W/mK, respectively. It is sug...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1991-10, Vol.30 (10), p.2423-2426 |
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| container_end_page | 2426 |
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| container_issue | 10 |
| container_start_page | 2423 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 30 |
| creator | YAMAMOTO, K ABE, T TAKASU, S.-I |
| description | The thermal diffusivity of Si was measured by a laser flash method up to 1723 K. SiC and fused quartz cells were prepared for the measurement on the melt. The thermal conductivities of the crystal and the melt at the melting point were determined to be 27.3±0.3 and 56±1 W/mK, respectively. It is suggested that a new (metastable) phase exists in a narrow temperature range just above the melting point. It irreversibly transformed to ordinary liquid metal. The new phase may have very low emissivity, and/or large specific heat. |
| doi_str_mv | 10.1143/jjap.30.2423 |
| format | Article |
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SiC and fused quartz cells were prepared for the measurement on the melt. The thermal conductivities of the crystal and the melt at the melting point were determined to be 27.3±0.3 and 56±1 W/mK, respectively. It is suggested that a new (metastable) phase exists in a narrow temperature range just above the melting point. It irreversibly transformed to ordinary liquid metal. The new phase may have very low emissivity, and/or large specific heat.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.30.2423</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Physics ; Specific phase transitions</subject><ispartof>Japanese Journal of Applied Physics, 1991-10, Vol.30 (10), p.2423-2426</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-c15d33a01cec794cb429eabef31866a308f86bf2000d4b2f402659c29b260a133</citedby><cites>FETCH-LOGICAL-c357t-c15d33a01cec794cb429eabef31866a308f86bf2000d4b2f402659c29b260a133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5073786$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>YAMAMOTO, K</creatorcontrib><creatorcontrib>ABE, T</creatorcontrib><creatorcontrib>TAKASU, S.-I</creatorcontrib><title>Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting</title><title>Japanese Journal of Applied Physics</title><description>The thermal diffusivity of Si was measured by a laser flash method up to 1723 K. SiC and fused quartz cells were prepared for the measurement on the melt. The thermal conductivities of the crystal and the melt at the melting point were determined to be 27.3±0.3 and 56±1 W/mK, respectively. It is suggested that a new (metastable) phase exists in a narrow temperature range just above the melting point. It irreversibly transformed to ordinary liquid metal. The new phase may have very low emissivity, and/or large specific heat.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Specific phase transitions</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9UE1PwzAUixBIjMGNH5ADRzpe8tK0PU4TX9OkcRjn6jVNIFPWjqZD6r9nZYiTZcu2LDN2K2AmhMKH7Zb2M4SZVBLP2ESgyhIFOj1nEwApElVIecmuYtweqU6VmLD15tN2Owq89s4dov_2_cBbx003xJ5C8I3l1NQ8-K-Dr3n0wZu2-ZVohPaYHTj1fGdD75uPa3bhKER784dT9v70uFm8JKv18-tivkoMplmfGJHWiATCWJMVylRKFpYq61DkWhNC7nJdOQkAtaqkU-PewsiikhpIIE7Z_anXdG2MnXXlvvM76oZSQDmeUS6X87cSoRzPONrvTvY9RUPBddQYH_8zKWSY5Rp_AKmPX2E</recordid><startdate>19911001</startdate><enddate>19911001</enddate><creator>YAMAMOTO, K</creator><creator>ABE, T</creator><creator>TAKASU, S.-I</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19911001</creationdate><title>Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting</title><author>YAMAMOTO, K ; ABE, T ; TAKASU, S.-I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-c15d33a01cec794cb429eabef31866a308f86bf2000d4b2f402659c29b260a133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Specific phase transitions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAMAMOTO, K</creatorcontrib><creatorcontrib>ABE, T</creatorcontrib><creatorcontrib>TAKASU, S.-I</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAMAMOTO, K</au><au>ABE, T</au><au>TAKASU, S.-I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1991-10-01</date><risdate>1991</risdate><volume>30</volume><issue>10</issue><spage>2423</spage><epage>2426</epage><pages>2423-2426</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>The thermal diffusivity of Si was measured by a laser flash method up to 1723 K. SiC and fused quartz cells were prepared for the measurement on the melt. The thermal conductivities of the crystal and the melt at the melting point were determined to be 27.3±0.3 and 56±1 W/mK, respectively. It is suggested that a new (metastable) phase exists in a narrow temperature range just above the melting point. It irreversibly transformed to ordinary liquid metal. The new phase may have very low emissivity, and/or large specific heat.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.30.2423</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1991-10, Vol.30 (10), p.2423-2426 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_30_2423 |
| source | Institute of Physics Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Equations of state, phase equilibria, and phase transitions Exact sciences and technology Physics Specific phase transitions |
| title | Thermal diffusivity of crystalline and liquid silicon and an anomaly at melting |
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