Preparation of Cu-O films by electron cyclotron resonance plasma-assisted sputtering

Preparation of Cu-O films has been performed by using electron cyclotron resonance (ECR) plasma-assisted sputtering, and the effects of activated species in the ECR plasma on the properties of Cu-O films have been investigated from measurements of the optical emission spectroscopy. The emission intensities from O 2 + molecular ions and O * atomic radicals in the ECR oxygen plasma increase monotonously with increasing microwave power of the ECR plasma source. The oxygen content of Cu-O films can be successfully controlled by changing the microwave power of the ECR plasma source. These results suggest that the role of the activated species of oxygen is important in oxidization of Cu atoms.