A vertical integration of GaAs/GaAlAs LED and vertical FET with embedded Schottky electrodes
A GaAs/AlGaAs surface-emitting light-emitting diode (LED) and a vertical field-effect transistor (FET) are vertically integrated using the selective atmospheric pressure metalorganic chemical vapor deposition (MOCVD) technique. The embedded Schottky metal between the epitaxial GaAs layers is employe...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1990-12, Vol.29 (12), p.L2427-L2429 |
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| container_end_page | L2429 |
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| container_issue | 12 |
| container_start_page | L2427 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 29 |
| creator | Hong, Chang-Hee Kim, Chang-Tae Kwon, Young-Se |
| description | A GaAs/AlGaAs surface-emitting light-emitting diode (LED) and a vertical field-effect transistor (FET) are vertically integrated using the selective atmospheric pressure metalorganic chemical vapor deposition (MOCVD) technique. The embedded Schottky metal between the epitaxial GaAs layers is employed as the gate electrode of the vertical driver FET. As the drain current of FET flows through the LED, the light output of LED is effectively controlled by the gate voltage of the driver FET. This device operates as a three-terminal optoelectronic device controlled by an electric input. |
| doi_str_mv | 10.1143/JJAP.29.L2427 |
| format | Article |
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hong, Chang-Hee</creatorcontrib><creatorcontrib>Kim, Chang-Tae</creatorcontrib><creatorcontrib>Kwon, Young-Se</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hong, Chang-Hee</au><au>Kim, Chang-Tae</au><au>Kwon, Young-Se</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A vertical integration of GaAs/GaAlAs LED and vertical FET with embedded Schottky electrodes</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1990-12-01</date><risdate>1990</risdate><volume>29</volume><issue>12</issue><spage>L2427</spage><epage>L2429</epage><pages>L2427-L2429</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A GaAs/AlGaAs surface-emitting light-emitting diode (LED) and a vertical field-effect transistor (FET) are vertically integrated using the selective atmospheric pressure metalorganic chemical vapor deposition (MOCVD) technique. The embedded Schottky metal between the epitaxial GaAs layers is employed as the gate electrode of the vertical driver FET. As the drain current of FET flows through the LED, the light output of LED is effectively controlled by the gate voltage of the driver FET. This device operates as a three-terminal optoelectronic device controlled by an electric input.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.29.L2427</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2427-L2429 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_29_L2427 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | A vertical integration of GaAs/GaAlAs LED and vertical FET with embedded Schottky electrodes |
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